| Literature DB >> 26569255 |
Lin Shu1, Bin Peng2, Zhengbing Yang3, Rui Wang4, Senyang Deng5, Xingzhao Liu6.
Abstract
Two Surface acoustic wave (SAW) resonators were fabricated on langasite substrates with Euler angle of (0°, 138.5°, 117°) and (0°, 138.5°, 27°). A dipole antenna was bonded to the prepared SAW resonator to form a wireless sensor. The characteristics of the SAW sensors were measured by wireless frequency domain interrogation methods from 20 °C to 600 °C. Different temperature behaviors of the sensors were observed. Strain sensing was achieved using a cantilever configuration. The sensors were measured under applied strain from 20 °C to 500 °C. The shift of the resonance frequency contributed merely by strain is extracted from the combined effects of temperature and strain. Both the strain factors of the two SAW sensors increase with rising ambient temperature, and the SAW sensor deposited on (0°, 138.5°, 117°) cut is more sensitive to applied strain. The measurement errors of the two sensors are also discussed. The relative errors of the two sensors are between 0.63% and 2.09%. Even at 500 °C, the hysteresis errors of the two sensors are less than 5%.Entities:
Keywords: SAW wireless sensor; high temperature; langasite; strain
Year: 2015 PMID: 26569255 PMCID: PMC4701294 DOI: 10.3390/s151128531
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1Diagram of the wireless measurement system.
Figure 2(a) Photo and (b) schematic diagram of the high temperature measurement setup.
Figure 3Group delay curves of the two devices at room temperature.
Figure 4Resonance frequency of the devices as a function of temperature: (a) Device A and (b) Device B.
Figure 5The relative changes of the resonance frequency as a function of temperature.
Figure 6Resonance frequency shifts of Device A (a) under different strain loading sequences; and (b) as a function of the applied strain at room temperature.
Figure 7Dependence of the resonance frequency shift on the deflection at different temperatures: (a) Device A and (b) Device B.
Figure 8Dependence of ϕ(d) on the applied deflection at different temperature for (a) Device A and (b) Device B.
Figure 9|SF| of Device A and Device B dependent on temperature.
The eL of Device A and Device B at different temperatures.
| T (°C) | 20 | 100 | 200 | 300 | 400 | 500 |
|---|---|---|---|---|---|---|
| 1.68 | 1.42 | 0.86 | 2.09 | 1.89 | 1.92 | |
| 1.08 | 1.11 | 1.23 | 0.63 | 1.59 | 1.66 |
Figure 10The hysteresis between loading and unloading direction of Device A at 20 °C.
The hysteresis of Device A and Device B at different temperatures.
| T (°C) | 20 | 100 | 200 | 300 | 400 | 500 |
|---|---|---|---|---|---|---|
| 3.55 | 3.62 | 3.40 | 4.02 | 4.27 | 4.53 | |
| 2.48 | 2.04 | 2.58 | 3.66 | 3.97 | 4.79 |