| Literature DB >> 26398227 |
Kun Chen1, Xi Wan1, Weiguang Xie2, Jinxiu Wen3, Zhiwen Kang1, Xiaoliang Zeng4, Huanjun Chen3, Jianbin Xu1.
Abstract
Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.Entities:
Keywords: SKPFM; built-in electric fields; built-in potential; depletion-layer width; heterostructures
Year: 2015 PMID: 26398227 DOI: 10.1002/adma.201502375
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849