| Literature DB >> 26376198 |
Xudong Wang1,2, Peng Wang1, Jianlu Wang1, Weida Hu1, Xiaohao Zhou1, Nan Guo1, Hai Huang1, Shuo Sun1, Hong Shen1, Tie Lin1, Minghua Tang2, Lei Liao3, Anquan Jiang4, Jinglan Sun1, Xiangjian Meng1, Xiaoshuang Chen1, Wei Lu1, Junhao Chu1.
Abstract
A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).Entities:
Keywords: 2D materials, MoS2 transistors; ferroelectrics; photodetectors; photoresponsitivity
Year: 2015 PMID： 26376198 DOI： 10.1002/adma.201503340
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849