Literature DB >> 26364647

Bandgap Engineering of Phosphorene by Laser Oxidation toward Functional 2D Materials.

Junpeng Lu1, Jing Wu1, Alexandra Carvalho2, Angelo Ziletti3, Hongwei Liu4, Junyou Tan2, Yifan Chen4, A H Castro Neto1,2, Barbaros Özyilmaz1,2, Chorng Haur Sow1,2.   

Abstract

We demonstrate a straightforward and effective laser pruning approach to reduce multilayer black phosphorus (BP) to few-layer BP under ambient condition. Phosphorene oxides and suboxides are formed and the degree of laser-induced oxidation is controlled by the laser power. Since the band gaps of the phosphorene suboxide depend on the oxygen concentration, this simple technique is able to realize localized band gap engineering of the thin BP. Micropatterns of few-layer phosphorene suboxide flakes with unique optical and fluorescence properties are created. Remarkably, some of these suboxide flakes display long-term (up to 2 weeks) stability in ambient condition. Comparing against the optical properties predicted by first-principle calculations, we develop a "calibration" map in using focused laser power as a handle to tune the band gap of the BP suboxide flake. Moreover, the surface of the laser patterned region is altered to be sensitive to toxic gas by way of fluorescence contrast. Therefore, the multicolored display is further demonstrated as a toxic gas monitor. In addition, the BP suboxide flake is demonstrated to exhibit higher drain current modulation and mobility comparable to that of the pristine BP in the electronic application.

Entities:  

Keywords:  2D material; laser; localized oxidation; phosphorene; photonics

Year:  2015        PMID: 26364647     DOI: 10.1021/acsnano.5b04623

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  8 in total

1.  Phosphorene: Overcoming the Oxidation Barrier.

Authors:  Alexandra Carvalho; Antonio H Castro Neto
Journal:  ACS Cent Sci       Date:  2015-09-14       Impact factor: 14.553

2.  Field Effect Transistor Based on Layered NiPS 3.

Authors:  Ramesh Naidu Jenjeti; Rajat Kumar; Muthu P Austeria; S Sampath
Journal:  Sci Rep       Date:  2018-06-05       Impact factor: 4.379

3.  Monolayer black phosphorus by sequential wet-chemical surface oxidation.

Authors:  Stefan Wild; Vicent Lloret; Victor Vega-Mayoral; Daniele Vella; Edurne Nuin; Martin Siebert; Maria Koleśnik-Gray; Mario Löffler; Karl J J Mayrhofer; Christoph Gadermaier; Vojislav Krstić; Frank Hauke; Gonzalo Abellán; Andreas Hirsch
Journal:  RSC Adv       Date:  2019-01-25       Impact factor: 4.036

Review 4.  Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities.

Authors:  Jie Jiang; Tao Xu; Junpeng Lu; Litao Sun; Zhenhua Ni
Journal:  Research (Wash D C)       Date:  2019-12-02

Review 5.  Two-Dimensional Pnictogen for Field-Effect Transistors.

Authors:  Wenhan Zhou; Jiayi Chen; Pengxiang Bai; Shiying Guo; Shengli Zhang; Xiufeng Song; Li Tao; Haibo Zeng
Journal:  Research (Wash D C)       Date:  2019-10-16

6.  Probing the Laser Ablation of Black Phosphorus by Raman Spectroscopy.

Authors:  Gabriele Faraone; Roberta Sipala; Massimiliano Mariani; Christian Martella; Carlo Grazianetti; Alessandro Molle; Emiliano Bonera
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2021-04-21       Impact factor: 4.126

7.  The role of chalcogen vacancies for atomic defect emission in MoS2.

Authors:  Elmar Mitterreiter; Bruno Schuler; Ana Micevic; Daniel Hernangómez-Pérez; Katja Barthelmi; Katherine A Cochrane; Jonas Kiemle; Florian Sigger; Julian Klein; Edward Wong; Edward S Barnard; Kenji Watanabe; Takashi Taniguchi; Michael Lorke; Frank Jahnke; Johnathan J Finley; Adam M Schwartzberg; Diana Y Qiu; Sivan Refaely-Abramson; Alexander W Holleitner; Alexander Weber-Bargioni; Christoph Kastl
Journal:  Nat Commun       Date:  2021-06-22       Impact factor: 14.919

Review 8.  Optical Patterning of Two-Dimensional Materials.

Authors:  Pavana Siddhartha Kollipara; Jingang Li; Yuebing Zheng
Journal:  Research (Wash D C)       Date:  2020-01-27
  8 in total

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