| Literature DB >> 26305343 |
Qisheng Wang1, Yao Wen1, Fengrui Yao2, Yun Huang1, Zhenxing Wang1, Molin Li1, Xueying Zhan1, Kai Xu1, Fengmei Wang1, Feng Wang1, Jie Li1, Kaihui Liu2, Chao Jiang1, Fengqi Liu3, Jun He1.
Abstract
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).Entities:
Keywords: Pb1-xSnxSe nanoplates; epitaxial growth; few-layer BN; functional substrates; mid-infrared detection
Year: 2015 PMID： 26305343 DOI： 10.1002/smll.201502049
Source DB: PubMed Journal: Small ISSN： 1613-6810 Impact factor: 13.281