| Literature DB >> 26274092 |
Wasana Senevirathna1, Cassie M Daddario1, Geneviève Sauvé1.
Abstract
Small internal reorganization energy is desirable for high-performance optoelectronic materials, as it facilitates both charge separation and charge transport. However, only a handful of n-type electron accepting materials are known to have small reorganization energies. Here, DFT calculations were performed to predict the reorganization energy of azadipyrromethene-based dyes and their complexes. All compounds studied were most stable in their anionic state and had high electron affinity, indicating their potential as n-type material. The homoleptic zinc(II) complexes had significantly lower reorganization energies than either the free ligands or the BF2(+) chelates. The low reorganization energies of the zinc(II) complexes are explained by the large and rigid π conjugated system that extends across the two azadipyrromethene ligands via interligand π-π interactions. This work suggests that Zn(II) complexation is a novel strategy for obtaining materials that combine low internal reorganization energy with high electron affinity for the development of novel n-type optoelectronic materials.Entities:
Keywords: artificial photosynthesis; electron transport; non-fullerene acceptor; optoelectronic devices; organic photovoltaic
Year: 2014 PMID: 26274092 DOI: 10.1021/jz402735c
Source DB: PubMed Journal: J Phys Chem Lett ISSN: 1948-7185 Impact factor: 6.475