| Literature DB >> 26187908 |
Sumihiro Koyama1, Taishi Tsubouchi2, Keiko Usui2, Katsuyuki Uematsu3, Akihiro Tame3, Yuichi Nogi2, Yukari Ohta2, Yuji Hatada2, Chiaki Kato4, Tetsuya Miwa5, Takashi Toyofuku4, Takehiko Nagahama6, Masaaki Konishi7, Yuriko Nagano4, Fumiyoshi Abe8.
Abstract
The purpose of this study was to develop novel methods for attachment and cultivation of specifically positioned single yeast cells on a microelectrode surface with the application of a weak electrical potential. Saccharomyces cerevisiae diploid strains attached to an indium tin oxide/glass (ITO) electrode to which a negative potential between -0.2 and -0.4 V vs. Ag/AgCl was applied, while they did not adhere to a gallium-doped zinc oxide/glass electrode surface. The yeast cells attached to the negative potential-applied ITO electrodes showed normal cell proliferation. We found that the flocculin FLO10 gene-disrupted diploid BY4743 mutant strain (flo10Δ /flo10Δ) almost completely lost the ability to adhere to the negative potential-applied ITO electrode. Our results indicate that the mechanisms of diploid BY4743 S. cerevisiae adhesion involve interaction between the negative potential-applied ITO electrode and the Flo10 protein on the cell wall surface. A combination of micropatterning techniques of living single yeast cell on the ITO electrode and omics technologies holds potential of novel, highly parallelized, microchip-based single-cell analysis that will contribute to new screening concepts and applications. © FEMS 2015.Entities:
Keywords: Flo10; Saccharomyces cerevisiae; electrical attachment; indium tin oxide; potential-controlled electrode; single-cell cultivation
Mesh:
Substances:
Year: 2015 PMID: 26187908 PMCID: PMC4629795 DOI: 10.1093/femsyr/fov064
Source DB: PubMed Journal: FEMS Yeast Res ISSN: 1567-1356 Impact factor: 2.796
Saccharomyces cerevisiae strains used in this study.
| Strains | Genotype/description | Source |
|---|---|---|
| BY4741 (wild type) | Brachmann | |
| Giaever | ||
| BY4742 (wild type) | Brachmann | |
| Giaever | ||
| BY4743 (wild type) | Brachmann | |
| Giaever | ||
| BY4741 ( | Giaever | |
| BY4742 ( | Giaever | |
| BY4743 ( | Giaever | |
| BY4741 ( | Giaever | |
| BY4742 ( | Giaever | |
| BY4743 ( | Giaever | |
| YPH499 (wild type) | Sikorski and Hieter ( | |
| YPH500 (wild type) | Sikorski and Hieter ( | |
| YPH501 (wild type) | Sikorski and Hieter ( | |
Figure 1.Attachment of S. cerevisiae yeast cells to the potential-applied ITO electrode. (A) An optically transparent working electrode was placed on bottom of a chamber device with a counter- (Pt) and a reference (Ag/AgCl) electrode. The electrode potential is controlled with an Ag/AgCl reference electrode through a potentiostat. (B) Schematic illustration of the electrical attachment method for yeasts is shown. 1 × 107 cells/5 ml in PBS(−) of each yeast strain was seeded into the three-electrode chamber device. (C) The S. cerevisiae cells attached to the constant potential-applied patterned ITO electrodes in PBS(−) after 24 h at RT. PI, propidium iodide.
Figure 2.Attachment of S. cerevisiae strains to the potential-applied ITO electrode. (A) Strains BY4742 and BY4743 on either the top or bottom of the patterned ITO electrode surface in PBS(−) after 24 h at RT. (B) The diploid BY4743 S. cerevisiae strain attached to 30 × 30 μm2 microelectrodes to which a −0.4 V vs. Ag/AgCl potential was applied in PBS(−) at RT. (C) Time course of haploid and diploid S. cerevisiae strain attachment to the electrode with either a −0.2 V or a −0.4 V vs. Ag/AgCl applied potential in PBS(−) at RT. The values are mean ± SEM (n = 8). *P < 0.001 compared with 0.5 h. (D) SEM images of haploid and diploid S. cerevisiae strains attached to the reticulated ITO electrode to which either a −0.2 V or a −0.4 V vs. Ag/AgCl potential was applied in PBS(−) for 24 h at RT. The images were obtained from a 75º angle. (E) Cell growth comparison of S. cerevisiae cells from the ITO electrode. The haploid and diploid yeast cell growth was monitored after cell scraping or subculture. Either an OC, a −0.2 V vs. Ag/AgCl constant potential, or −0.4 V vs. Ag/AgCl constant potential was applied for 24 h in PBS(−) at RT. The values are mean ± SEM (n = 4).
Figure 4.Single yeast cell cultivation on the ITO microelectrode array. (A) Schematic illustration and photograph of an ITO microelectrode array. (B) Schematic illustration of the electrical attachment and cultivation method for single yeast cells is shown. (C) Single-cell diploid BY4743 cultivation on a 100 × 100 μm2 microelectrode. The diploid BY4743 single cells attached to a small region of the ITO microelectrode to which a −0.4 V vs. Ag/AgCl potential was applied at RT in PBS(−). After the removal of PBS(−), 1 μL of YM medium was added to each ITO microelectrode region and then incubated for 2 days at 28ºC. The proliferating yeast cells on the microelectrode were transferred to 15-ml centrifuge tubes and cultured for a further 3 days. (D) Cell number of the electrically attached diploid and haploid yeast cells on a small square region of the ITO microelectrode. The values are mean ± SEM (n = 8).
Figure 3.Electrode surface recognition properties of the diploid S. cerevisiae strain. (A) Distribution patterns of strain BY4743 on the potential-applied ITO and GZO electrodes in PBS(−) after 24 h at RT. (B) Cell densities of strain BY4743 on the potential-applied ITO and GZO electrodes in PBS(−) after 24 h at RT. A potential between −0.4 V and +0.6 V vs. Ag/AgCl was applied to either an ITO or a GZO electrode for 24 h in PBS(−) at RT. The values are mean ± SEM (n = 8). *P < 0.05, **P < 0.001 compared with the ITO electrode. The resting potentials of the GZO and ITO electrodes in PBS(−) at RT were −284 ± 10 mV vs. Ag/AgCl (mean ± SEM; n = 12) and +5 ± 5 mV vs. Ag/AgCl (mean ± SEM; n = 104), respectively.
Figure 5.Inhibitory effects of five sugar solutions on S. cerevisiae adhesion to the negative potential-applied ITO electrode surface. (A) BY4741 and BY4742 haploid strains. (B) YPH499 and YPH500 haploid strains. (C) BY4743 diploid strain. (D) YPH501 diploid strain. The BY4743 and YPH501 strains pretreated with 70% EtOH for 1 h at 60ºC were stained with propidium iodide alone. Either an OC, a −0.2 V vs. Ag/AgCl constant potential, or −0.4 V vs. Ag/AgCl constant potential was applied for 24 h in PBS(−) or in each of the sugar solutions (all 280 mM) at RT, respectively. The values are mean ± SEM (n = 8). **P < 0.001 compared with PBS(−).
Figure 6.FLO1 and FLO10 gene-disrupted S. cerevisiae strains on the potential-applied ITO electrode. (A) Distribution patterns of wild-type (WT), FLO1 gene-disrupted (flo1Δ/ flo1Δ) and FLO10 gene-disrupted (flo10Δ/ flo10Δ) BY4743 diploid strains on the ITO electrode to which a potential between −0.4 V and +0.6 V vs. Ag/AgCl was applied for 24 h in PBS(−) at RT. (B) Cell density of wild-type (WT), FLO1 gene-disrupted (flo1Δ/ flo1Δ) and FLO10 gene-disrupted (flo10Δ/ flo10Δ) BY4743 diploid strain on the potential-applied ITO electrode. (C) Cell density of wild-type (WT), FLO1 gene-disrupted (flo1Δ) and FLO10 gene-disrupted (flo10Δ) BY4741 and BY4742 haploid strains on the potential-applied ITO electrode. The values are mean ± SEM (n = 8). *P < 0.05, **P < 0.001 compared with WT.