Literature DB >> 26154305

Nanopatterning and Electrical Tuning of MoS2 Layers with a Subnanometer Helium Ion Beam.

Daniel S Fox, Yangbo Zhou, Pierce Maguire, Arlene O'Neill, Cormac Ó'Coileáin, Riley Gatensby, Alexey M Glushenkov1,2, Tao Tao1, Georg S Duesberg, Igor V Shvets, Mohamed Abid3, Mourad Abid3, Han-Chun Wu4, Ying Chen1, Jonathan N Coleman, John F Donegan, Hongzhou Zhang.   

Abstract

We report subnanometer modification enabled by an ultrafine helium ion beam. By adjusting ion dose and the beam profile, structural defects were controllably introduced in a few-layer molybdenum disulfide (MoS2) sample and its stoichiometry was modified by preferential sputtering of sulfur at a few-nanometer scale. Localized tuning of the resistivity of MoS2 was demonstrated and semiconducting, metallic-like, or insulating material was obtained by irradiation with different doses of He(+). Amorphous MoSx with metallic behavior has been demonstrated for the first time. Fabrication of MoS2 nanostructures with 7 nm dimensions and pristine crystal structure was also achieved. The damage at the edges of these nanostructures was typically confined to within 1 nm. Nanoribbons with widths as small as 1 nm were reproducibly fabricated. This nanoscale modification technique is a generalized approach that can be applied to various two-dimensional (2D) materials to produce a new range of 2D metamaterials.

Entities:  

Keywords:  Helium ion beam; MoS2; electrical tuning; nanopatterning; nanoribbon; stoichiometry

Year:  2015        PMID: 26154305     DOI: 10.1021/acs.nanolett.5b01673

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  15 in total

Review 1.  Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Authors:  Balakrishnan Kirubasankar; Yo Seob Won; Laud Anim Adofo; Soo Ho Choi; Soo Min Kim; Ki Kang Kim
Journal:  Chem Sci       Date:  2022-05-18       Impact factor: 9.969

2.  Quantification of defects engineered in single layer MoS2.

Authors:  Frederick Aryeetey; Tetyana Ignatova; Shyam Aravamudhan
Journal:  RSC Adv       Date:  2020-06-16       Impact factor: 4.036

3.  Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene.

Authors:  Yangbo Zhou; Daniel S Fox; Pierce Maguire; Robert O'Connell; Robert Masters; Cornelia Rodenburg; Hanchun Wu; Maurizio Dapor; Ying Chen; Hongzhou Zhang
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379

4.  Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams.

Authors:  Vighter Iberi; Liangbo Liang; Anton V Ievlev; Michael G Stanford; Ming-Wei Lin; Xufan Li; Masoud Mahjouri-Samani; Stephen Jesse; Bobby G Sumpter; Sergei V Kalinin; David C Joy; Kai Xiao; Alex Belianinov; Olga S Ovchinnikova
Journal:  Sci Rep       Date:  2016-08-02       Impact factor: 4.379

5.  Ultrafast electronic response of graphene to a strong and localized electric field.

Authors:  Elisabeth Gruber; Richard A Wilhelm; Rémi Pétuya; Valerie Smejkal; Roland Kozubek; Anke Hierzenberger; Bernhard C Bayer; Iñigo Aldazabal; Andrey K Kazansky; Florian Libisch; Arkady V Krasheninnikov; Marika Schleberger; Stefan Facsko; Andrei G Borisov; Andrés Arnau; Friedrich Aumayr
Journal:  Nat Commun       Date:  2016-12-21       Impact factor: 14.919

6.  Ion beam profiling from the interaction with a freestanding 2D layer.

Authors:  Ivan Shorubalko; Kyoungjun Choi; Michael Stiefel; Hyung Gyu Park
Journal:  Beilstein J Nanotechnol       Date:  2017-03-23       Impact factor: 3.649

7.  Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

Authors:  Jakub Jadwiszczak; Colin O'Callaghan; Yangbo Zhou; Daniel S Fox; Eamonn Weitz; Darragh Keane; Conor P Cullen; Ian O'Reilly; Clive Downing; Aleksey Shmeliov; Pierce Maguire; John J Gough; Cormac McGuinness; Mauro S Ferreira; A Louise Bradley; John J Boland; Georg S Duesberg; Valeria Nicolosi; Hongzhou Zhang
Journal:  Sci Adv       Date:  2018-03-02       Impact factor: 14.136

8.  Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions.

Authors:  Michael G Stanford; Pushpa Raj Pudasaini; Alex Belianinov; Nicholas Cross; Joo Hyon Noh; Michael R Koehler; David G Mandrus; Gerd Duscher; Adam J Rondinone; Ilia N Ivanov; T Zac Ward; Philip D Rack
Journal:  Sci Rep       Date:  2016-06-06       Impact factor: 4.379

9.  Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.

Authors:  Alex Belianinov; Matthew J Burch; Holland E Hysmith; Anton V Ievlev; Vighter Iberi; Michael A Susner; Michael A McGuire; Peter Maksymovych; Marius Chyasnavichyus; Stephen Jesse; Olga S Ovchinnikova
Journal:  Sci Rep       Date:  2017-11-30       Impact factor: 4.379

10.  Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors.

Authors:  Jakub Jadwiszczak; Pierce Maguire; Conor P Cullen; Georg S Duesberg; Hongzhou Zhang
Journal:  Beilstein J Nanotechnol       Date:  2020-09-04       Impact factor: 3.649

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.