| Literature DB >> 26112061 |
Bilu Liu1, Marianne Köpf2, Ahmad N Abbas1, Xiaomu Wang3, Qiushi Guo3, Yichen Jia3, Fengnian Xia3, Richard Weihrich4, Frederik Bachhuber4, Florian Pielnhofer4, Han Wang1, Rohan Dhall1, Stephen B Cronin1, Mingyuan Ge1, Xin Fang1, Tom Nilges2, Chongwu Zhou1.
Abstract
New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.Entities:
Keywords: anisotropic; band gaps; black arsenic; black phosphorus; infrared semiconductors; layered materials
Year: 2015 PMID： 26112061 DOI： 10.1002/adma.201501758
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849