Literature DB >> 26047069

Hydrogenated Graphene as a Homoepitaxial Tunnel Barrier for Spin and Charge Transport in Graphene.

Adam L Friedman1, Olaf M J van 't Erve1, Jeremy T Robinson1, Keith E Whitener1, Berend T Jonker1.   

Abstract

We demonstrate that hydrogenated graphene performs as a homoepitaxial tunnel barrier on a graphene charge/spin channel. We examine the tunneling behavior through measuring the IV curves and zero bias resistance. We also fabricate hydrogenated graphene/graphene nonlocal spin valves and measure the spin lifetimes using the Hanle effect, with spintronic nonlocal spin valve operation demonstrated up to room temperature. We show that while hydrogenated graphene indeed allows for spin transport in graphene and has many advantages over oxide tunnel barriers, it does not perform as well as similar fluorinated graphene/graphene devices, possibly due to the presence of magnetic moments in the hydrogenated graphene that act as spin scatterers.

Entities:  

Keywords:  electronic transport; graphene; hydrogenated graphene; spin transport; tunnel barrier

Year:  2015        PMID: 26047069     DOI: 10.1021/acsnano.5b02795

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  4 in total

1.  On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

Authors:  Bárbara Canto; Cristol P Gouvea; Bráulio S Archanjo; João E Schmidt; Daniel L Baptista
Journal:  Sci Rep       Date:  2015-09-23       Impact factor: 4.379

2.  Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure.

Authors:  Wenjing Yan; Edurne Sagasta; Mário Ribeiro; Yasuhiro Niimi; Luis E Hueso; Fèlix Casanova
Journal:  Nat Commun       Date:  2017-09-22       Impact factor: 14.919

Review 3.  Chemistry, properties, and applications of fluorographene.

Authors:  Demetrios D Chronopoulos; Aristides Bakandritsos; Martin Pykal; Radek Zbořil; Michal Otyepka
Journal:  Appl Mater Today       Date:  2017-12

4.  Electrical gate control of spin current in van der Waals heterostructures at room temperature.

Authors:  André Dankert; Saroj P Dash
Journal:  Nat Commun       Date:  2017-07-05       Impact factor: 14.919

  4 in total

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