Literature DB >> 26031499

Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture).

Shuji Nakamura1.   

Abstract

Keywords:  Blue LEDs; gallium nitride; light-emitting diodes; organometallic CVD; two-flow MOCVD

Year:  2015        PMID： 26031499     DOI： 10.1002/anie.201500591

Source DB:  PubMed          Journal:  Angew Chem Int Ed Engl        ISSN： 1433-7851            Impact factor:   15.336


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  10 in total

Review 1.  Diffusion-Driven Charge Transport in Light Emitting Devices.

Authors:  Iurii Kim; Pyry Kivisaari; Jani Oksanen; Sami Suihkonen
Journal:  Materials (Basel)       Date:  2017-12-12       Impact factor: 3.623

2.  Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon.

Authors:  Ko-Li Wu; Yi Chou; Chang-Chou Su; Chih-Chaing Yang; Wei-I Lee; Yi-Chia Chou
Journal:  Sci Rep       Date:  2017-12-20       Impact factor: 4.379

3.  Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate.

Authors:  Moonsang Lee; Hyunkyu Lee; Keun Man Song; Jaekyun Kim
Journal:  Nanomaterials (Basel)       Date:  2018-07-18       Impact factor: 5.076

Review 4.  Flow Photochemistry as a Tool in Organic Synthesis.

Authors:  Thomas H Rehm
Journal:  Chemistry       Date:  2020-10-01       Impact factor: 5.236

5.  Light Pollution and Circadian Misalignment: A Healthy, Blue-Free, White Light-Emitting Diode to Avoid Chronodisruption.

Authors:  Amador Menéndez-Velázquez; Dolores Morales; Ana Belén García-Delgado
Journal:  Int J Environ Res Public Health       Date:  2022-02-07       Impact factor: 3.390

6.  Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.

Authors:  Henryk Turski; Pawel Wolny; Mikolaj Chlipala; Marta Sawicka; Anna Reszka; Pawel Kempisty; Leszek Konczewicz; Grzegorz Muziol; Marcin Siekacz; Czeslaw Skierbiszewski
Journal:  Materials (Basel)       Date:  2022-08-27       Impact factor: 3.748

7.  Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

Authors:  Alice Hospodková; Jakub Čížek; František Hájek; Tomáš Hubáček; Jiří Pangrác; Filip Dominec; Karla Kuldová; Jan Batysta; Maciej O Liedke; Eric Hirschmann; Maik Butterling; Andreas Wagner
Journal:  Materials (Basel)       Date:  2022-10-05       Impact factor: 3.748

8.  Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'.

Authors:  Yang Mei; Guo-En Weng; Bao-Ping Zhang; Jian-Ping Liu; Werner Hofmann; Lei-Ying Ying; Jiang-Yong Zhang; Zeng-Cheng Li; Hui Yang; Hao-Chung Kuo
Journal:  Light Sci Appl       Date:  2017-01-27       Impact factor: 17.782

9.  Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory.

Authors:  Yi-Chia Tsai; Can Bayram
Journal:  ACS Omega       Date:  2020-01-30

10.  Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1).

Authors:  Mariusz Drygas; Katarzyna Lejda; Jerzy F Janik; Svitlana Stelmakh; Bogdan Palosz
Journal:  Materials (Basel)       Date:  2022-03-16       Impact factor: 3.623
  10 in total

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