Literature DB >> 26027677

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

Shiro Yamazaki1, Keisuke Maeda2, Yoshiaki Sugimoto2, Masayuki Abe3, Vladimír Zobač4, Pablo Pou5, Lucia Rodrigo5, Pingo Mutombo4, Ruben Pérez5, Pavel Jelínek2,4, Seizo Morita1.   

Abstract

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

Entities:  

Keywords:  Atomic manipulation; Si quantum dot; atomic switch; density functional theory; noncontact atomic force microscopy; scanning tunneling microscopy

Year:  2015        PMID: 26027677     DOI: 10.1021/acs.nanolett.5b00448

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Force-induced tautomerization in a single molecule.

Authors:  Janina N Ladenthin; Thomas Frederiksen; Mats Persson; John C Sharp; Sylwester Gawinkowski; Jacek Waluk; Takashi Kumagai
Journal:  Nat Chem       Date:  2016-07-04       Impact factor: 24.427

  1 in total

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