Literature DB >> 26005997

Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect.

Won Young Choi1, Hyung-jun Kim2, Joonyeon Chang2, Suk Hee Han2, Hyun Cheol Koo1, Mark Johnson3.   

Abstract

The spin-orbit interaction in two-dimensional electron systems provides an exceptionally rich area of research. Coherent spin precession in a Rashba effective magnetic field in the channel of a spin field-effect transistor and the spin Hall effect are the two most compelling topics in this area. Here, we combine these effects to provide a direct demonstration of the ballistic intrinsic spin Hall effect and to demonstrate a technique for an all-electric measurement of the Datta-Das conductance oscillation, that is, the oscillation in the source-drain conductance due to spin precession. Our hybrid device has a ferromagnet electrode as a spin injector and a spin Hall detector. Results from multiple devices with different channel lengths map out two full wavelengths of the Datta-Das oscillation. We also use the original Datta-Das technique with a single device of fixed length and measure the channel conductance as the gate voltage is varied. Our experiments show that the ballistic spin Hall effect can be used for efficient injection or detection of spin polarized electrons, thereby enabling the development of an integrated spin transistor.

Entities:  

Year:  2015        PMID: 26005997     DOI: 10.1038/nnano.2015.107

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  12 in total

1.  Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals.

Authors: 
Journal:  Phys Rev Lett       Date:  1985-10-21       Impact factor: 9.161

2.  Spin Hall effect transistor.

Authors:  Jörg Wunderlich; Byong-Guk Park; Andrew C Irvine; Liviu P Zârbo; Eva Rozkotová; Petr Nemec; Vít Novák; Jairo Sinova; Tomás Jungwirth
Journal:  Science       Date:  2010-12-24       Impact factor: 47.728

3.  Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.

Authors:  J Wunderlich; B Kaestner; J Sinova; T Jungwirth
Journal:  Phys Rev Lett       Date:  2005-02-04       Impact factor: 9.161

4.  Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures.

Authors:  Branislav K Nikolić; Satofumi Souma; Liviu P Zârbo; Jairo Sinova
Journal:  Phys Rev Lett       Date:  2005-07-20       Impact factor: 9.161

5.  Direct electronic measurement of the spin Hall effect.

Authors:  S O Valenzuela; M Tinkham
Journal:  Nature       Date:  2006-07-13       Impact factor: 49.962

6.  Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices.

Authors:  Takeshi Seki; Yu Hasegawa; Seiji Mitani; Saburo Takahashi; Hiroshi Imamura; Sadamichi Maekawa; Junsaku Nitta; Koki Takanashi
Journal:  Nat Mater       Date:  2008-01-13       Impact factor: 43.841

7.  Diameter-dependent electron mobility of InAs nanowires.

Authors:  Alexandra C Ford; Johnny C Ho; Yu-Lun Chueh; Yu-Chih Tseng; Zhiyong Fan; Jing Guo; Jeffrey Bokor; Ali Javey
Journal:  Nano Lett       Date:  2009-01       Impact factor: 11.189

8.  Spin hall effect in the presence of spin diffusion

Authors: 
Journal:  Phys Rev Lett       Date:  2000-07-10       Impact factor: 9.161

9.  Electrical measurement of the direct spin hall effect in Fe/InxGa(1-x)As heterostructures.

Authors:  E S Garlid; Q O Hu; M K Chan; C J Palmstrøm; P A Crowell
Journal:  Phys Rev Lett       Date:  2010-10-04       Impact factor: 9.161

10.  Observation of the inverse spin Hall effect in silicon.

Authors:  Kazuya Ando; Eiji Saitoh
Journal:  Nat Commun       Date:  2012-01-17       Impact factor: 14.919

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  9 in total

1.  A two-dimensional spin field-effect switch.

Authors:  Wenjing Yan; Oihana Txoperena; Roger Llopis; Hanan Dery; Luis E Hueso; Fèlix Casanova
Journal:  Nat Commun       Date:  2016-11-11       Impact factor: 14.919

2.  Highly Efficient Spin-Current Operation in a Cu Nano-Ring.

Authors:  Benedict A Murphy; Andrew J Vick; Marjan Samiepour; Atsufumi Hirohata
Journal:  Sci Rep       Date:  2016-11-21       Impact factor: 4.379

3.  Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure.

Authors:  Wenjing Yan; Edurne Sagasta; Mário Ribeiro; Yasuhiro Niimi; Luis E Hueso; Fèlix Casanova
Journal:  Nat Commun       Date:  2017-09-22       Impact factor: 14.919

4.  Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Authors:  M Oltscher; F Eberle; T Kuczmik; A Bayer; D Schuh; D Bougeard; M Ciorga; D Weiss
Journal:  Nat Commun       Date:  2017-11-27       Impact factor: 14.919

5.  Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures.

Authors:  Shun-Tsung Lo; Chin-Hung Chen; Ju-Chun Fan; L W Smith; G L Creeth; Che-Wei Chang; M Pepper; J P Griffiths; I Farrer; H E Beere; G A C Jones; D A Ritchie; Tse-Ming Chen
Journal:  Nat Commun       Date:  2017-07-10       Impact factor: 14.919

6.  Complementary spin transistor using a quantum well channel.

Authors:  Youn Ho Park; Jun Woo Choi; Hyung-Jun Kim; Joonyeon Chang; Suk Hee Han; Heon-Jin Choi; Hyun Cheol Koo
Journal:  Sci Rep       Date:  2017-04-20       Impact factor: 4.379

7.  Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states.

Authors:  Joo-Hyeon Lee; Hyung-Jun Kim; Joonyeon Chang; Suk Hee Han; Hyun Cheol Koo; Shehrin Sayed; Seokmin Hong; Supriyo Datta
Journal:  Sci Rep       Date:  2018-02-21       Impact factor: 4.379

8.  Electrically tunable spin-orbit interaction in an InAs nanosheet.

Authors:  Furong Fan; Yuanjie Chen; Dong Pan; Jianhua Zhao; H Q Xu
Journal:  Nanoscale Adv       Date:  2022-05-10

9.  Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires.

Authors:  Tae-Eon Park; Youn Ho Park; Jong-Min Lee; Sung Wook Kim; Hee Gyum Park; Byoung-Chul Min; Hyung-Jun Kim; Hyun Cheol Koo; Heon-Jin Choi; Suk Hee Han; Mark Johnson; Joonyeon Chang
Journal:  Nat Commun       Date:  2017-06-01       Impact factor: 14.919

  9 in total

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