Literature DB >> 21205664

Spin Hall effect transistor.

Jörg Wunderlich1, Byong-Guk Park, Andrew C Irvine, Liviu P Zârbo, Eva Rozkotová, Petr Nemec, Vít Novák, Jairo Sinova, Tomás Jungwirth.   

Abstract

The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer.

Year:  2010        PMID: 21205664     DOI: 10.1126/science.1195816

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  26 in total

1.  Control over topological insulator photocurrents with light polarization.

Authors:  J W McIver; D Hsieh; H Steinberg; P Jarillo-Herrero; N Gedik
Journal:  Nat Nanotechnol       Date:  2011-12-04       Impact factor: 39.213

2.  New moves of the spintronics tango.

Authors:  Jairo Sinova; Igor Žutić
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

3.  Spin Hall effect devices.

Authors:  Tomas Jungwirth; Jörg Wunderlich; Kamil Olejník
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

Review 4.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

5.  Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect.

Authors:  Won Young Choi; Hyung-jun Kim; Joonyeon Chang; Suk Hee Han; Hyun Cheol Koo; Mark Johnson
Journal:  Nat Nanotechnol       Date:  2015-05-25       Impact factor: 39.213

6.  Electric control of the spin Hall effect by intervalley transitions.

Authors:  N Okamoto; H Kurebayashi; T Trypiniotis; I Farrer; D A Ritchie; E Saitoh; J Sinova; J Mašek; T Jungwirth; C H W Barnes
Journal:  Nat Mater       Date:  2014-08-10       Impact factor: 43.841

7.  Spintronics: Electrons act constructively.

Authors:  Tomas Jungwirth; Jörg Wunderlich
Journal:  Nat Nanotechnol       Date:  2014-09       Impact factor: 39.213

8.  Observation of the spin Nernst effect.

Authors:  S Meyer; Y-T Chen; S Wimmer; M Althammer; T Wimmer; R Schlitz; S Geprägs; H Huebl; D Ködderitzsch; H Ebert; G E W Bauer; R Gross; S T B Goennenwein
Journal:  Nat Mater       Date:  2017-09-11       Impact factor: 43.841

9.  Observation of the inverse spin Hall effect in silicon.

Authors:  Kazuya Ando; Eiji Saitoh
Journal:  Nat Commun       Date:  2012-01-17       Impact factor: 14.919

10.  Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.

Authors:  Jinling Yu; Shuying Cheng; Yunfeng Lai; Qiao Zheng; Yonghai Chen
Journal:  Nanoscale Res Lett       Date:  2014-03-19       Impact factor: 4.703

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