| Literature DB >> 25993478 |
Kareem Rashid Rumah1, Yinghua Ma2, Jennifer R Linden2, Myat Lin Oo2, Josef Anrather2, Nicole Schaeren-Wiemers3, Miguel A Alonso4, Vincent A Fischetti5, Mark S McClain6, Timothy Vartanian2.
Abstract
Clostridium perfringens ε-toxin (ETX) is a potent pore-forming toxin responsible for a central nervous system (CNS) disease in ruminant animals with characteristics of blood-brain barrier (BBB) dysfunction and white matter injury. ETX has been proposed as a potential causative agent for Multiple Sclerosis (MS), a human disease that begins with BBB breakdown and injury to myelin forming cells of the CNS. The receptor for ETX is unknown. Here we show that both binding of ETX to mammalian cells and cytotoxicity requires the tetraspan proteolipid Myelin and Lymphocyte protein (MAL). While native Chinese Hamster Ovary (CHO) cells are resistant to ETX, exogenous expression of MAL in CHO cells confers both ETX binding and susceptibility to ETX-mediated cell death. Cells expressing rat MAL are ~100 times more sensitive to ETX than cells expressing similar levels of human MAL. Insertion of the FLAG sequence into the second extracellular loop of MAL abolishes ETX binding and cytotoxicity. ETX is known to bind specifically and with high affinity to intestinal epithelium, renal tubules, brain endothelial cells and myelin. We identify specific binding of ETX to these structures and additionally show binding to retinal microvasculature and the squamous epithelial cells of the sclera in wild-type mice. In contrast, there is a complete absence of ETX binding to tissues from MAL knockout (MAL-/-) mice. Furthermore, MAL-/- mice exhibit complete resistance to ETX at doses in excess of 1000 times the symptomatic dose for wild-type mice. We conclude that MAL is required for both ETX binding and cytotoxicity.Entities:
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Year: 2015 PMID: 25993478 PMCID: PMC4439126 DOI: 10.1371/journal.ppat.1004896
Source DB: PubMed Journal: PLoS Pathog ISSN: 1553-7366 Impact factor: 6.823
Fig 2ETX induces rapid internalization of rMAL that precedes or coincides with cell death.
CHO cells stably expressing GFP-rMAL (green) were treated with 50 nM ETX in the presence of 2 μg/ml PI (red) and fixed at 0 minutes (A), 5 minutes (B), 15 minutes (C), 30 minutes (D), 60 minutes (E), and 90 minutes (F) following the treatment. Regions (c-e) framed in C-E are shown at a higher magnification to illustrate morphological details. Images in c-e are shown in separate fluorescence channels and as an overlay plus a DAPI-counterstain. Hollow arrows in c point to the cells on which MAL is largely present on the cell surface. Noticeably, these cells are negative for PI staining. The morphological heterogeneities likely reflect different phases of cell cycle in individual cells within the population. Arrows in c and d point to the cells displaying intracellular vesicles of MAL protein, which indicate an ongoing MAL internalization process in response to ETX. These are dying cells that exhibit PI inclusion in their nuclei with a higher staining density in nucleoli. Arrowheads in d and e point to the dead cells that display condensed nuclei brightly stained with PI and contain intracellular MAL protein. Scale bars represent 20 μm. Data shown are representative of at least three independent experiments.
Fig 7ETX pore formation, subcellular localization, and toxicity in cells are closely associated with MAL expression.
(A) Formation of ETX pore complexes in MDCK cells and rMAL-expressing CHO cells. Western-blots of cell extracts treated with active ETX (+) or control buffer (-) for 1 hour at 37 C°. Detergent resistant membranes were isolated from ETX or control treated cells and solubilized in Lamelli buffer under non-reducing conditions without heating. Treatment of CHOGFP-rMAL cells with active ETX leads to formation oligomeric complexes (GFP-rMAL) that do not form in ETX treated CHOGFP cells (GFP) or mock transfected CHO cells (Mock). The relative molecular weight (MW) of the oligomeric complex formed in CHOGFP-rMAL cells is similar to the size of the ETX oligomeric complex formed with ETX treatment of MDCK cells (MDCK), shown at 145 kDa on the blots. ETX monomer runs at 29 kDa. (B) ETX co-localizes with MAL on the cell membrane, and binds to MAL-expressing CHO cells and MDCK cells in a similar pattern. CHO cells stably expressing GFP-vector or GFP-rMAL fusion protein (GFP-rMAL) and MDCK cells were incubated with 25 nM ETX-594 conjugate (red) for 30 minutes before fixation for fluorescence analysis. DAPI (blue) were counterstained to reveal cell nuclei. Arrowheads point to CHO cells displaying co-localized ETX-MAL intracellular vesicles indicative of ongoing internalization. Scale bar represent 20 μm. (C and D) ETX sensitivity correlates with MAL expression levels in MDCK cells. Cell viability assays (C) show that various MDCK cell lines or cell culture manipulations exhibit different sensitivity to ETX-induced cell death. MDCK (CCL-34) cells were treated with a dose of ETX sufficient to kill >95% of the monolayer and individual surviving cells were recovered as a pool (MDCK-R) or as individual clonal populations (1E3 and 3C7). In addition, two additional MDCK cell derivatives (CRL-2935 and CRL-2936) were acquired from ATCC. Sensitivity to ETX was determined by incubating cell monolayers with serial dilutions of purified ETX. Quantitative RT-PCR analysis (D) shows that ETX-sensitive cells exhibit significantly higher levels of MAL expression compared to the cell lines resistant to ETX treatment. Data are from a single experiment and are representative of four (A), three (B), or at least three (C and D) independent triplicate experiments. Data shown are means and SD. Comparisons between MDCK and the other cell lines were performed by ANOVA followed by Dunnett’s post hoc test. * P<0.05.
Symptom-onset time following ETX administration in mice.
| Genotype | Treatment | Number of mice | Symptom-onset time |
|---|---|---|---|
| MAL+/+ | Control | 5 | None observed |
| MAL+/+ | ETX | 8 | 11.8 ± 2.9 min |
| MAL-/- | Control | 4 | None observed |
| MAL-/- | ETX | 5 | None observed |