Literature DB >> 25898786

Two-dimensional materials and their prospects in transistor electronics.

F Schwierz1, J Pezoldt, R Granzner.   

Abstract

During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

Entities:  

Year:  2015        PMID: 25898786     DOI: 10.1039/c5nr01052g

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  25 in total

1.  Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2-MoS2 heterojunction.

Authors:  Junhui Weng; Shang-Peng Gao
Journal:  RSC Adv       Date:  2019-10-16       Impact factor: 4.036

2.  Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.

Authors:  Hesameddin Ilatikhameneh; Tarek Ameen; Bozidar Novakovic; Yaohua Tan; Gerhard Klimeck; Rajib Rahman
Journal:  Sci Rep       Date:  2016-08-19       Impact factor: 4.379

3.  Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence.

Authors:  Kathleen M McCreary; Aubrey T Hanbicki; Glenn G Jernigan; James C Culbertson; Berend T Jonker
Journal:  Sci Rep       Date:  2016-01-13       Impact factor: 4.379

4.  A microprocessor based on a two-dimensional semiconductor.

Authors:  Stefan Wachter; Dmitry K Polyushkin; Ole Bethge; Thomas Mueller
Journal:  Nat Commun       Date:  2017-04-11       Impact factor: 14.919

5.  Structural and electronic properties of Mo6S3I6 nanowires by newly proposed theoretical compositional ordering.

Authors:  You Kyoung Chung; Weon-Gyu Lee; Sudong Chae; Jae-Young Choi; Joonsuk Huh
Journal:  Sci Rep       Date:  2019-02-04       Impact factor: 4.379

6.  Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors.

Authors:  Jianwei Wang; Yong Zhang
Journal:  Sci Rep       Date:  2016-04-19       Impact factor: 4.379

Review 7.  Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Authors:  Rui Dong; Irma Kuljanishvili
Journal:  J Vac Sci Technol B Nanotechnol Microelectron       Date:  2017-05-01

8.  Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection.

Authors:  Zengtao Bao; Jialin Sun; Xiaoqian Zhao; Zengyao Li; Songkui Cui; Qingyang Meng; Ye Zhang; Tong Wang; Yanfeng Jiang
Journal:  Int J Nanomedicine       Date:  2017-06-27

9.  Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate.

Authors:  Vijayshankar Asokan; Dancheng Zhu; Wei Huang; Hulian Wang; Wandong Gao; Ze Zhang; Chuanhong Jin
Journal:  Sci Rep       Date:  2018-05-09       Impact factor: 4.379

Review 10.  Miniaturization of CMOS.

Authors:  Henry H Radamson; Xiaobin He; Qingzhu Zhang; Jinbiao Liu; Hushan Cui; Jinjuan Xiang; Zhenzhen Kong; Wenjuan Xiong; Junjie Li; Jianfeng Gao; Hong Yang; Shihai Gu; Xuewei Zhao; Yong Du; Jiahan Yu; Guilei Wang
Journal:  Micromachines (Basel)       Date:  2019-04-30       Impact factor: 2.891

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