| Literature DB >> 25884108 |
L Z Hao1, W Gao, Y J Liu, Z D Han, Q Z Xue, W Y Guo, J Zhu, Y R Li.
Abstract
A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.Entities:
Year: 2015 PMID: 25884108 DOI: 10.1039/c5nr01275a
Source DB: PubMed Journal: Nanoscale ISSN: 2040-3364 Impact factor: 7.790