| Literature DB >> 25800534 |
Chong Ren1, Colman McGrath, Yanqi Yang.
Abstract
To assess the effectiveness of diode low-level laser therapy (LLLT) for orthodontic pain control, a systematic and extensive electronic search for randomised controlled trials (RCTs) investigating the effects of diode LLLT on orthodontic pain prior to November 2014 was performed using the Cochrane Library (Issue 9, 2014), PubMed (1997), EMBASE (1947) and Web of Science (1956). The Cochrane tool for risk of bias evaluation was used to assess the bias risk in the chosen data. A meta-analysis was conducted using RevMan 5.3. Of the 186 results, 14 RCTs, with a total of 659 participants from 11 countries, were included. Except for three studies assessed as having a 'moderate risk of bias', the RCTs were rated as having a 'high risk of bias'. The methodological weaknesses were mainly due to 'blinding' and 'allocation concealment'. The meta-analysis showed that diode LLLT significantly reduced orthodontic pain by 39 % in comparison with placebo groups (P = 0.02). Diode LLLT was shown to significantly reduce the maximum pain intensity among parallel-design studies (P = 0.003 versus placebo groups; P = 0.000 versus control groups). However, no significant effects were shown for split-mouth-design studies (P = 0.38 versus placebo groups). It was concluded that the use of diode LLLT for orthodontic pain appears promising. However, due to methodological weaknesses, there was insufficient evidence to support or refute LLLT's effectiveness. RCTs with better designs and appropriate sample power are required to provide stronger evidence for diode LLLT's clinical applications.Entities:
Mesh:
Year: 2015 PMID: 25800534 PMCID: PMC4562996 DOI: 10.1007/s10103-015-1743-4
Source DB: PubMed Journal: Lasers Med Sci ISSN: 0268-8921 Impact factor: 3.161
Fig. 1PRISMA flow diagram of the study inclusion process
Characteristics of included studies
| Study ID | No. (M/F) | Country | Age in mean ± SD (range) | Study design | Grouping method | Orthodontic treatment | Evaluation method | Evaluation interval |
|---|---|---|---|---|---|---|---|---|
| Eslamian et al. [ | 37 (12/25) | Iran | 24.97 (11–32) | Split-mouth | I: P: | Separator placement | VAS | Pre-LLLT, 6, 24, and 30 h, day 3, 4, 5, 6 and 7 post-LLLT |
| Heravi et al. [ | 20 (3/17) | Iran | 22.1 ± 5.3 (15–31) | Split-mouth | I: P: | Canine retraction | VAS | Day 0, 4, 7, 11, 15, 28, 32, 35, 39, 43 and 56 (pre-LLLT) |
| Abtahi et al. [ | 29 (24/5) | Iran | 15.03 (12–22) | Split-mouth | I: P: | Separator placement | VAS | Pre- and post-LLLT for 5 days |
| Artés-Ribas et al. [ | 20 (6/14) | Spain | 26.4 (19–33.8) | Split-mouth | I: P: | Separator placement | VAS | Pre-LLLT, 5 min, 6 h, 24 h, 48 h and 72 h post-LLLT |
| Domínguez and Velásquez [ | 59 (19/40) | Colombia | 24.3 ± 3 | Split-mouth | Self-ligation group I: Straight-wire group I: | Archwire placement (0.019 × 0.025 in. stainless steel) | VAS | 2 h, 6 h, 24 h, day 2, 3 and 7 post-LLLT |
| Bicakci et al. [ | 19 (8/11) | Turkey | 13.9 (13.5–14.5) | Split-mouth | I: P: | Molar band placement | VAS | 5 min, 1 h and 24 h after placement |
| Doshi-Mehta and Bhad-Patil [ | 20 (8/12) | India | 12–23 | Split-mouth | I: P: | Canine retraction | VAS | Day 1 after placement, Day 3 and 30 |
| Angelieri et al. [ | 12 | Brazil | 12.66 | Split-mouth | I: P: | Canine retraction | VAS | 12, 24, 48 and 72 h post-LLLT and repeat in the 2nd month |
| Lim et al. [ | 39 | Singapore | 21-24 | Split-mouth | 15 s group: 30 s group: 60 s group: P: | Separator placement | VAS | Day 0 (pre-separation, pre-LLLT and post-LLLT); day 2, 3, 4 and 5 (pre-LLLT and post-LLLT) |
| Kim et al. [ | 88 (23/65) | Korea | 22.7 | Parallel | I: P: B: | Separator placement | VAS | 5 min, 1, 6, 12 h and day 1, 2, 3, 4, 5, 6 and 7 after placement |
| Marini et al. [ | 120 (64/56) | Italy | 23.01 ± 1.39 | Parallel | I: P: B: | Separator placement | VAS A modified version of Harazaki’s questionnaire | Immediately and 12, 24, 36, 48, 72 and 96 h after placement |
| Nobrega et al. [ | 60 (22/38) | Brazil | 12–26 | Parallel | I: P: | Separator placement | VAS | 2, 6 and 24 h, day 3 and 5 after placement |
| Tortamano et al. [ | 60 (18/42) | Japan | 15.9 (12–18) | Parallel | I: P: B: | Archwire placement (0.014 in. stainless steel) | VAS Harazaki’s questionnaire | Over the next 7 days |
| Turhani et al. [ | 76 (30/46) | Austria | 23.1 | Parallel | I: P: | Archwire placement (0.016 in. stainless steel) | Self-designed questionnaire | 6, 30 and 54 h after treatment |
No. number of participants, M male, F female, I intervention group, P placebo group, B blank control group, VAS visual analogue scale
The parameters and regimen of diode laser applied in included studies
| Study ID | Type of laser | Wavelength | Output/energy (density) | Total dose per point (tooth) | Time of exposure | Method of application | Frequency of laser treatment |
|---|---|---|---|---|---|---|---|
| Eslamian et al. [ | GaAlAs laser, continuous mode | 810 nm | 100 mW, 2 J/cm2 | 2 J/point, 20 J/tooth | 200 s/tooth | Perpendicular to the long axis of the teeth on 5 points of the buccal and lingual side (10 points/tooth) | Immediately after separator placement and 24 h later |
| Heravi et al. [ | GaAlAs laser, continuous mode | 810 nm | 200 mW, 21.4 J/cm2 | 6 J/point, 60 J/tooth | 300 s/tooth | Perpendicular in contact with the mucosa on 5 points of the buccal and lingual side (10 points/tooth) | Day 0, 4, 7, 11, 15, 28, 32, 35, 39, 43 and 56 |
| Abtahi et al. [ | GaAs laser, high pulse mode | 904 nm | 200 mW | 1.5 J/point, 6 J/tooth | 30 s/tooth | Perpendicular in contact with the gum on 2 points of the vestibular and lingual side (4 points/tooth) | Immediately after separation and once daily for the following 4 days |
| Artés-Ribas et al. [ | GaAlAs laser, continuous mode | 830 nm | 100 mW, 5 J/cm2 | 2 J/point, 12 J/tooth | 120 s/tooth | In contact with the mucosa on 3 points of the buccal and palatal side (6 points/tooth) | Single application (immediately after separator placement) |
| Domínguez and Velásquez [ | GaAlAs laser, continuous mode | 830 nm | 100 mW, 80 J/cm2 | 2.2 J/area, 4.4 J/ tooth | 44 s/tooth | Scanned 1 mm from the mucosa along the vestibular and palatal surface of the root (2 areas/tooth) | Single application |
| Bicakci et al. [ | GaAlAs laser, continuous mode | 820 nm | 50 mW, 7.96 J/cm2 | 0.25 J/point, 1 J/ tooth | 20 s/tooth | In direct contact on 4 points around the tooth (4 points/tooth) | Immediately after band placement and 24 h later |
| Doshi-Mehta and Bhad-Patil [ | GaAlAs laser, continuous mode | 800 nm | 100 mW | 0.8 J/point, 8 J/tooth | 80 s/tooth | In direct contact on 5 points of the buccal and lingual side (10 points/tooth) | Day 0, 3, 7 and 14 in the 1st month, every 15th day until complete canine retraction on the laser side |
| Angelieri et al. [ | ArGaAl laser | 780 nm | 20 mW, 5 J/cm2 | 0.2 J/point, 2 J/tooth | 100 s /tooth | Perpendicular in contact with the mucosa on 5 points of the buccal and lingual side (10 points/tooth) | Immediately after spring activation, day 3 and 7 |
| Lim et al. [ | GaAsA1 laser, continuous mode | 830 nm | 30 mW | 0.45, 0.9, 1.8 J/tooth | 15, 30 and 60 s/tooth | Applied onto the buccal mucosa overlying the middle third of the root (1 point/tooth) | Immediately after separator placement and the following 4 days |
| Kim et al. [ | AlGaInP laser | 635 nm | 6 mW, 10 mJ | 0.18 J/point, 0.72 J/tooth | 120 s/tooth | In direct contact with the mucosa on 2 areas of the buccal and lingual side (4 points/tooth) | Immediately after separator placement and every 12 h for 1 week |
| Marini et al. [ | GaAs laser, superpulse mode | 910 nm | 160 mW | 9 J/point, 18 J/tooth | 113 s/tooth | Applied on the cervical third of buccal and lingual gingiva (2 points/tooth) | Single application (immediately after separator placement) |
| Nobrega et al. [ | GaAsA1 laser | 830 nm | 40.6 mW, 1 or 2 J/cm2 | 5 J/tooth | 125 s/tooth | Applied on root apex and along the root axis on the buccal side (4 points/tooth) | Single application (immediately after separator placement) |
| Tortamano et al. [ | GaAlAs laser, continuous mode | 830 nm | 30 mW, 0.5 J/cm2 | 0.48 J/point, 4.8 J/tooth | 160 s/ tooth | Applied on 5 areas of the buccal and lingual mucosa overlying the dental root (10 points/tooth) | Single application (immediately after archwire placement) |
| Turhani et al. [ | Diode laser continuous mode | 670 nm | 75 mW, 4.2 J/cm2 | 2.25 J/tooth | 30 s/tooth | At a distance of 5 to 8 mm with a right angle to the mucosa at the level of the biomechanical centre of resistance (1 point/tooth) | Single application (immediately after archwire placement) |
Fig. 2a Risk of bias summary: review authors’ judgments about each risk of bias item for each included study. b Risk of bias graph: review authors’ judgments about each risk of bias item presented as percentages across all included studies
Fig. 3Comparison: laser versus placebo, outcome: prevalence of pain (studies with parallel design)
Fig. 4a Comparison: laser versus placebo, outcome: end of pain (studies with parallel design). b Comparison: laser versus control, outcome: end of pain (studies with parallel design)
Fig. 5a Comparison: laser versus placebo, outcome: maximum pain intensity, subgroup analysis: split-mouth versus parallel design. b Comparison: laser versus control, outcome: maximum pain intensity (studies with parallel design). c Comparison: laser versus placebo, outcome: mean pain intensity, subgroup analysis: split-mouth versus parallel design