| Literature DB >> 25730863 |
Hatef Sadeghi1, Jan A Mol2, Chit Siong Lau2, G Andrew D Briggs2, Jamie Warner2, Colin J Lambert1.
Abstract
Provided the electrical properties of electroburnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10-nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electroburnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semimetallic band structure of graphene and a cross-over from electrodes with multiple-path connectivity to single-path connectivity just before breaking. Therefore, our results suggest that conductance enlargement before junction rupture is a signal of the formation of electroburnt junctions, with a picoscale current path formed from a single sp(2) bond.Entities:
Keywords: electroburning; graphene; nanoelectronics; picoelectronics; quantum interference
Year: 2015 PMID: 25730863 PMCID: PMC4352825 DOI: 10.1073/pnas.1418632112
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 11.205