Literature DB >> 24898877

High-yield fabrication of nm-size gaps in monolayer CVD graphene.

Cornelia Nef1, László Pósa, Péter Makk, Wangyang Fu, András Halbritter, Christian Schönenberger, Michel Calame.   

Abstract

Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-layer graphene electrodes. The process is implemented for graphene grown via chemical vapor deposition using an electroburning process at room temperature and in vacuum. A yield of over 95% for the gap formation is obtained. This approach allows producing single-layer graphene electrodes for molecular electronics at a large scale. Additionally, from Raman spectroscopy and electroburning carried out simultaneously, we can follow the heating process and infer the temperature at which the gap formation happens.

Entities:  

Year:  2014        PMID: 24898877     DOI: 10.1039/c4nr01838a

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  14 in total

1.  Conductance enlargement in picoscale electroburnt graphene nanojunctions.

Authors:  Hatef Sadeghi; Jan A Mol; Chit Siong Lau; G Andrew D Briggs; Jamie Warner; Colin J Lambert
Journal:  Proc Natl Acad Sci U S A       Date:  2015-02-17       Impact factor: 11.205

Review 2.  Graphene nanodevices for DNA sequencing.

Authors:  Stephanie J Heerema; Cees Dekker
Journal:  Nat Nanotechnol       Date:  2016-02       Impact factor: 39.213

3.  Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes.

Authors:  Hatef Sadeghi; Sara Sangtarash; Colin J Lambert
Journal:  Beilstein J Nanotechnol       Date:  2015-06-26       Impact factor: 3.649

4.  Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum.

Authors:  Andrea Candini; Nils Richter; Domenica Convertino; Camilla Coletti; Franck Balestro; Wolfgang Wernsdorfer; Mathias Kläui; Marco Affronte
Journal:  Beilstein J Nanotechnol       Date:  2015-03-11       Impact factor: 3.649

5.  Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Authors:  Agnes Gubicza; Dávid Zs Manrique; László Pósa; Colin J Lambert; György Mihály; Miklós Csontos; András Halbritter
Journal:  Sci Rep       Date:  2016-08-04       Impact factor: 4.379

6.  Raman spectroscopy of graphene under ultrafast laser excitation.

Authors:  C Ferrante; A Virga; L Benfatto; M Martinati; D De Fazio; U Sassi; C Fasolato; A K Ott; P Postorino; D Yoon; G Cerullo; F Mauri; A C Ferrari; T Scopigno
Journal:  Nat Commun       Date:  2018-01-22       Impact factor: 14.919

7.  Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.

Authors:  Amedeo Bellunato; Sasha D Vrbica; Carlos Sabater; Erik W de Vos; Remko Fermin; Kirsten N Kanneworff; Federica Galli; Jan M van Ruitenbeek; Grégory F Schneider
Journal:  Nano Lett       Date:  2018-03-12       Impact factor: 11.189

8.  Stable anchoring chemistry for room temperature charge transport through graphite-molecule contacts.

Authors:  Alexander V Rudnev; Veerabhadrarao Kaliginedi; Andrea Droghetti; Hiroaki Ozawa; Akiyoshi Kuzume; Masa-Aki Haga; Peter Broekmann; Ivan Rungger
Journal:  Sci Adv       Date:  2017-06-09       Impact factor: 14.136

9.  Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors.

Authors:  Pascal Gehring; Jakub K Sowa; Jonathan Cremers; Qingqing Wu; Hatef Sadeghi; Yuewen Sheng; Jamie H Warner; Colin J Lambert; G Andrew D Briggs; Jan A Mol
Journal:  ACS Nano       Date:  2017-04-21       Impact factor: 15.881

10.  Nanogap-Engineerable Electromechanical System for Ultralow Power Memory.

Authors:  Jian Zhang; Ya Deng; Xiao Hu; Jean Pierre Nshimiyimana; Siyu Liu; Xiannian Chi; Pei Wu; Fengliang Dong; Peipei Chen; Weiguo Chu; Haiqing Zhou; Lianfeng Sun
Journal:  Adv Sci (Weinh)       Date:  2017-12-03       Impact factor: 16.806

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