Literature DB >> 25676825

Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures.

Junyeon Kwon1, Young Ki Hong, Gyuchull Han, Inturu Omkaram, Woong Choi, Sunkook Kim, Youngki Yoon.   

Abstract

Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  MoS2; local-bottom gated structure; phototransistors; responsivity; transition metal dichalcogenide

Year:  2015        PMID： 25676825     DOI： 10.1002/adma.201404367

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  11 in total

1.  Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility.

Authors:  Peng Yang; Jiajia Zha; Guoyun Gao; Long Zheng; Haoxin Huang; Yunpeng Xia; Songcen Xu; Tengfei Xiong; Zhuomin Zhang; Zhengbao Yang; Ye Chen; Dong-Keun Ki; Juin J Liou; Wugang Liao; Chaoliang Tan
Journal:  Nanomicro Lett       Date:  2022-04-19

2.  Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.

Authors:  Seung Hyun Baek; Yura Choi; Woong Choi
Journal:  Nanoscale Res Lett       Date:  2015-10-06       Impact factor: 4.703

3.  Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector.

Authors:  Chulseung Jung; Seung Min Kim; Hyunseong Moon; Gyuchull Han; Junyeon Kwon; Young Ki Hong; Inturu Omkaram; Youngki Yoon; Sunkook Kim; Jozeph Park
Journal:  Sci Rep       Date:  2015-10-19       Impact factor: 4.379

4.  Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters.

Authors:  Geonwook Yoo; Sol Lea Choi; Sang Jin Park; Kyu-Tae Lee; Sanghyun Lee; Min Suk Oh; Junseok Heo; Hui Joon Park
Journal:  Sci Rep       Date:  2017-01-18       Impact factor: 4.379

5.  Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.

Authors:  Nengjie Huo; Gerasimos Konstantatos
Journal:  Nat Commun       Date:  2017-09-18       Impact factor: 14.919

6.  CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness.

Authors:  Jinwu Park; Geonwook Yoo; Junseok Heo
Journal:  Sci Rep       Date:  2019-02-05       Impact factor: 4.379

7.  Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

Authors:  Ki Seok Kim; You Jin Ji; Ki Hyun Kim; Seunghyuk Choi; Dong-Ho Kang; Keun Heo; Seongjae Cho; Soonmin Yim; Sungjoo Lee; Jin-Hong Park; Yeon Sik Jung; Geun Young Yeom
Journal:  Nat Commun       Date:  2019-10-16       Impact factor: 14.919

8.  Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode.

Authors:  Junghak Park; Dipjyoti Das; Minho Ahn; Sungho Park; Jihyun Hur; Sanghun Jeon
Journal:  Nano Converg       Date:  2019-10-02

9.  Locally Gated SnS2/hBN Thin Film Transistors with a Broadband Photoresponse.

Authors:  Dongil Chu; Sang Woo Pak; Eun Kyu Kim
Journal:  Sci Rep       Date:  2018-07-12       Impact factor: 4.379

10.  Ultrasensitive negative capacitance phototransistors.

Authors:  Luqi Tu; Rongrong Cao; Xudong Wang; Yan Chen; Shuaiqin Wu; Fang Wang; Zhen Wang; Hong Shen; Tie Lin; Peng Zhou; Xiangjian Meng; Weida Hu; Qi Liu; Jianlu Wang; Ming Liu; Junhao Chu
Journal:  Nat Commun       Date:  2020-01-03       Impact factor: 14.919
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