Literature DB >> 25519134

Deterministic switching of ferromagnetism at room temperature using an electric field.

J T Heron1, J L Bosse2, Q He3, Y Gao4, M Trassin5, L Ye2, J D Clarkson6, C Wang7, Jian Liu8, S Salahuddin9, D C Ralph10, D G Schlom11, J Iñiguez12, B D Huey13, R Ramesh14.   

Abstract

The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.

Entities:  

Year:  2014        PMID: 25519134     DOI: 10.1038/nature14004

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  32 in total

1.  Electric field switching of the magnetic anisotropy of a ferromagnetic layer exchange coupled to the multiferroic compound BiFeO3.

Authors:  D Lebeugle; A Mougin; M Viret; D Colson; L Ranno
Journal:  Phys Rev Lett       Date:  2009-12-14       Impact factor: 9.161

2.  Materials science. The renaissance of magnetoelectric multiferroics.

Authors:  Nicola A Spaldin; Manfred Fiebig
Journal:  Science       Date:  2005-07-15       Impact factor: 47.728

3.  Multiferroics: a magnetic twist for ferroelectricity.

Authors:  Sang-Wook Cheong; Maxim Mostovoy
Journal:  Nat Mater       Date:  2007-01       Impact factor: 43.841

4.  Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature.

Authors:  T Zhao; A Scholl; F Zavaliche; K Lee; M Barry; A Doran; M P Cruz; Y H Chu; C Ederer; N A Spaldin; R R Das; D M Kim; S H Baek; C B Eom; R Ramesh
Journal:  Nat Mater       Date:  2006-09-03       Impact factor: 43.841

5.  Nanoscale control of domain architectures in BiFeO3 thin films.

Authors:  Ying-Hao Chu; Qing He; Chan-Ho Yang; Pu Yu; Lane W Martin; Padraic Shafer; R Ramesh
Journal:  Nano Lett       Date:  2009-04       Impact factor: 11.189

6.  Projector augmented-wave method.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1994-12-15

7.  Prediction of a novel magnetoelectric switching mechanism in multiferroics.

Authors:  Yurong Yang; Jorge Iñiguez; Ai-Jie Mao; L Bellaiche
Journal:  Phys Rev Lett       Date:  2014-02-05       Impact factor: 9.161

8.  Magnetic control of ferroelectric polarization.

Authors:  T Kimura; T Goto; H Shintani; K Ishizaka; T Arima; Y Tokura
Journal:  Nature       Date:  2003-11-06       Impact factor: 49.962

9.  A polar corundum oxide displaying weak ferromagnetism at room temperature.

Authors:  Man-Rong Li; Umut Adem; Sean R C McMitchell; Zhongling Xu; Chris I Thomas; John E Warren; Duong V Giap; Hongjun Niu; Xinming Wan; Robert G Palgrave; Florian Schiffmann; Furio Cora; Ben Slater; Tim L Burnett; Markys G Cain; Artem M Abakumov; Gustaaf van Tendeloo; Michael F Thomas; Matthew J Rosseinsky; John B Claridge
Journal:  J Am Chem Soc       Date:  2012-02-15       Impact factor: 15.419

10.  Electric control of magnetism at the Fe/BaTiO₃ interface.

Authors:  G Radaelli; D Petti; E Plekhanov; I Fina; P Torelli; B R Salles; M Cantoni; C Rinaldi; D Gutiérrez; G Panaccione; M Varela; S Picozzi; J Fontcuberta; R Bertacco
Journal:  Nat Commun       Date:  2014-03-03       Impact factor: 14.919

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  60 in total

1.  Electric-field control of spin-orbit torque in a magnetically doped topological insulator.

Authors:  Yabin Fan; Xufeng Kou; Pramey Upadhyaya; Qiming Shao; Lei Pan; Murong Lang; Xiaoyu Che; Jianshi Tang; Mohammad Montazeri; Koichi Murata; Li-Te Chang; Mustafa Akyol; Guoqiang Yu; Tianxiao Nie; Kin L Wong; Jun Liu; Yong Wang; Yaroslav Tserkovnyak; Kang L Wang
Journal:  Nat Nanotechnol       Date:  2016-01-04       Impact factor: 39.213

2.  Materials science: Two steps for a magnetoelectric switch.

Authors:  Kathrin Dörr; Andreas Herklotz
Journal:  Nature       Date:  2014-12-18       Impact factor: 49.962

3.  Multi-stimuli manipulation of antiferromagnetic domains assessed by second-harmonic imaging.

Authors:  J-Y Chauleau; E Haltz; C Carrétéro; S Fusil; M Viret
Journal:  Nat Mater       Date:  2017-05-08       Impact factor: 43.841

4.  Magnetic microscopy and simulation of strain-mediated control of magnetization in Ni/PMN-PT nanostructures.

Authors:  Ian Gilbert; Andres C Chavez; Daniel T Pierce; John Unguris; Wei-Yang Sun; Cheng-Yen Liang; Gregory P Carman
Journal:  Appl Phys Lett       Date:  2016-10-17       Impact factor: 3.791

5.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

6.  In situ unsupervised learning using stochastic switching in magneto-electric magnetic tunnel junctions.

Authors:  Indranil Chakraborty; Amogh Agrawal; Akhilesh Jaiswal; Gopalakrishnan Srinivasan; Kaushik Roy
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2019-12-23       Impact factor: 4.226

Review 7.  Multiferroics beyond electric-field control of magnetism.

Authors:  Nicola A Spaldin
Journal:  Proc Math Phys Eng Sci       Date:  2020-01-22       Impact factor: 2.704

8.  Designing switchable polarization and magnetization at room temperature in an oxide.

Authors:  P Mandal; M J Pitcher; J Alaria; H Niu; P Borisov; P Stamenov; J B Claridge; M J Rosseinsky
Journal:  Nature       Date:  2015-09-17       Impact factor: 49.962

9.  Real-space imaging of non-collinear antiferromagnetic order with a single-spin magnetometer.

Authors:  I Gross; W Akhtar; V Garcia; L J Martínez; S Chouaieb; K Garcia; C Carrétéro; A Barthélémy; P Appel; P Maletinsky; J-V Kim; J Y Chauleau; N Jaouen; M Viret; M Bibes; S Fusil; V Jacques
Journal:  Nature       Date:  2017-09-13       Impact factor: 49.962

10.  Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic.

Authors:  Julia A Mundy; Charles M Brooks; Megan E Holtz; Jarrett A Moyer; Hena Das; Alejandro F Rébola; John T Heron; James D Clarkson; Steven M Disseler; Zhiqi Liu; Alan Farhan; Rainer Held; Robert Hovden; Elliot Padgett; Qingyun Mao; Hanjong Paik; Rajiv Misra; Lena F Kourkoutis; Elke Arenholz; Andreas Scholl; Julie A Borchers; William D Ratcliff; Ramamoorthy Ramesh; Craig J Fennie; Peter Schiffer; David A Muller; Darrell G Schlom
Journal:  Nature       Date:  2016-09-22       Impact factor: 49.962

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