Literature DB >> 25375735

Relativistic Néel-order fields induced by electrical current in antiferromagnets.

J Železný1, H Gao2, K Výborný3, J Zemen4, J Mašek5, Aurélien Manchon6, J Wunderlich7, Jairo Sinova8, T Jungwirth9.   

Abstract

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn(2)Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.

Entities:  

Year:  2014        PMID: 25375735     DOI: 10.1103/PhysRevLett.113.157201

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  23 in total

Review 1.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

2.  Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors.

Authors:  Shi-Jing Gong; Cheng Gong; Yu-Yun Sun; Wen-Yi Tong; Chun-Gang Duan; Jun-Hao Chu; Xiang Zhang
Journal:  Proc Natl Acad Sci U S A       Date:  2018-08-03       Impact factor: 11.205

3.  Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structures.

Authors:  Young-Wan Oh; Seung-Heon Chris Baek; Y M Kim; Hae Yeon Lee; Kyeong-Dong Lee; Chang-Geun Yang; Eun-Sang Park; Ki-Seung Lee; Kyoung-Whan Kim; Gyungchoon Go; Jong-Ryul Jeong; Byoung-Chul Min; Hyun-Woo Lee; Kyung-Jin Lee; Byong-Guk Park
Journal:  Nat Nanotechnol       Date:  2016-07-11       Impact factor: 39.213

Review 4.  Antiferromagnetic spintronics.

Authors:  T Jungwirth; X Marti; P Wadley; J Wunderlich
Journal:  Nat Nanotechnol       Date:  2016-03       Impact factor: 39.213

5.  Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques.

Authors:  Takayuki Shiino; Se-Hyeok Oh; Paul M Haney; Seo-Won Lee; Gyungchoon Go; Byong-Guk Park; Kyung-Jin Lee
Journal:  Phys Rev Lett       Date:  2016-08-16       Impact factor: 9.161

6.  Interface-Induced Phenomena in Magnetism.

Authors:  Frances Hellman; Axel Hoffmann; Yaroslav Tserkovnyak; Geoffrey S D Beach; Eric E Fullerton; Chris Leighton; Allan H MacDonald; Daniel C Ralph; Dario A Arena; Hermann A Dürr; Peter Fischer; Julie Grollier; Joseph P Heremans; Tomas Jungwirth; Alexey V Kimel; Bert Koopmans; Ilya N Krivorotov; Steven J May; Amanda K Petford-Long; James M Rondinelli; Nitin Samarth; Ivan K Schuller; Andrei N Slavin; Mark D Stiles; Oleg Tchernyshyov; André Thiaville; Barry L Zink
Journal:  Rev Mod Phys       Date:  2017-06-05       Impact factor: 54.494

7.  Out-of-plane carrier spin in transition-metal dichalcogenides under electric current.

Authors:  Xiao Li; Hua Chen; Qian Niu
Journal:  Proc Natl Acad Sci U S A       Date:  2020-07-07       Impact factor: 11.205

8.  Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

Authors:  R Galceran; I Fina; J Cisneros-Fernández; B Bozzo; C Frontera; L López-Mir; H Deniz; K-W Park; B-G Park; Ll Balcells; X Martí; T Jungwirth; B Martínez
Journal:  Sci Rep       Date:  2016-10-20       Impact factor: 4.379

9.  Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

Authors:  S Yu Bodnar; L Šmejkal; I Turek; T Jungwirth; O Gomonay; J Sinova; A A Sapozhnik; H-J Elmers; M Kläui; M Jourdan
Journal:  Nat Commun       Date:  2018-01-24       Impact factor: 14.919

10.  Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10(5) A/cm(2) dc Current.

Authors:  Jiahao Han; Yuyan Wang; Feng Pan; Cheng Song
Journal:  Sci Rep       Date:  2016-08-22       Impact factor: 4.379

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