| Literature DB >> 25358891 |
Hsuan-Chun Chang1, Chien Lu, Cheng-Liang Liu, Wen-Chang Chen.
Abstract
Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture.Entities:
Keywords: C60; ambipolar trapping; floating-gate; non-volatile memory; transistors
Year: 2014 PMID: 25358891 DOI: 10.1002/adma.201403771
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849