| Literature DB >> 25348375 |
Sergey V Ovsyannikov1, Alexander E Karkin, Natalia V Morozova, Vladimir V Shchennikov, Elena Bykova, Artem M Abakumov, Alexander A Tsirlin, Konstantin V Glazyrin, Leonid Dubrovinsky.
Abstract
An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.Entities:
Keywords: bandgap engineering; direct-bandgap semiconductors; electronic transport; transition metal oxides
Year: 2014 PMID: 25348375 DOI: 10.1002/adma.201403304
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849