| Literature DB >> 25330787 |
Daowei He1, Yuhan Zhang1, Qisheng Wu2, Rui Xu3, Haiyan Nan2, Junfang Liu3, Jianjun Yao4, Zilu Wang2, Shijun Yuan2, Yun Li1, Yi Shi1, Jinlan Wang2, Zhenhua Ni2, Lin He3, Feng Miao5, Fengqi Song5, Hangxun Xu6, K Watanabe7, T Taniguchi7, Jian-Bin Xu8, Xinran Wang1.
Abstract
Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10 cm(2) V(-1) s(-1) and aggressively scaled saturation voltage ~1 V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.Entities:
Year: 2014 PMID: 25330787 DOI: 10.1038/ncomms6162
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919