Literature DB >> 25302768

Optical properties and band gap of single- and few-layer MoTe2 crystals.

Claudia Ruppert1, Burak Aslan, Tony F Heinz.   

Abstract

Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.

Entities:  

Keywords:  2D materials; Layered materials; MoTe2; electronic and optical properties; transition metal dichalcogenides

Year:  2014        PMID: 25302768     DOI: 10.1021/nl502557g

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   12.262


  50 in total

1.  Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity.

Authors:  Yongzhuo Li; Jianxing Zhang; Dandan Huang; Hao Sun; Fan Fan; Jiabin Feng; Zhen Wang; C Z Ning
Journal:  Nat Nanotechnol       Date:  2017-07-17       Impact factor: 39.213

2.  Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness.

Authors:  Asha Rani; Kyle DiCamillo; Sergiy Krylyuk; Ratan Debnath; Payam Taheri; Makarand Paranjape; Can E Korman; Mona E Zaghloul; Albert V Davydov
Journal:  Proc SPIE Int Soc Opt Eng       Date:  2018

3.  Characterization of Few-Layer 1T' MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering.

Authors:  Ryan Beams; Luiz Gustavo Cançado; Sergiy Krylyuk; Irina Kalish; Berç Kalanyan; Arunima K Singh; Kamal Choudhary; Alina Bruma; Patrick M Vora; Francesca Tavazza; Albert V Davydov; Stephan J Stranick
Journal:  ACS Nano       Date:  2016-10-13       Impact factor: 15.881

4.  Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy.

Authors:  Ji Ho Sung; Hoseok Heo; Saerom Si; Yong Hyeon Kim; Hyeong Rae Noh; Kyung Song; Juho Kim; Chang-Soo Lee; Seung-Young Seo; Dong-Hwi Kim; Hyoung Kug Kim; Han Woong Yeom; Tae-Hwan Kim; Si-Young Choi; Jun Sung Kim; Moon-Ho Jo
Journal:  Nat Nanotechnol       Date:  2017-09-18       Impact factor: 39.213

5.  Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications.

Authors:  Asha Rani; Shiqi Guo; Sergiy Krylyuk; Kyle DiCamillo; Ratan Debnath; Albert V Davydov; Mona E Zaghloul
Journal:  IEEE Trans Electron Devices       Date:  2018       Impact factor: 2.917

6.  Near-infrared photonic phase-change properties of transition metal ditellurides.

Authors:  Yifei Li; Akshay Singh; Sergiy Krylyuk; Albert Davydov; R Jaramillo
Journal:  Proc SPIE Int Soc Opt Eng       Date:  2019

7.  Structural phase transition in monolayer MoTe2 driven by electrostatic doping.

Authors:  Ying Wang; Jun Xiao; Hanyu Zhu; Yao Li; Yousif Alsaid; King Yan Fong; Yao Zhou; Siqi Wang; Wu Shi; Yuan Wang; Alex Zettl; Evan J Reed; Xiang Zhang
Journal:  Nature       Date:  2017-10-11       Impact factor: 49.962

8.  Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

Authors:  Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal:  Adv Sci (Weinh)       Date:  2021-03-16       Impact factor: 16.806

9.  Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures.

Authors:  Jihoon Kim; A Venkatesan; Hanul Kim; Yewon Kim; Dongmok Whang; Gil-Ho Kim
Journal:  Adv Sci (Weinh)       Date:  2021-03-15       Impact factor: 16.806

10.  Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1- xW xTe2.

Authors:  Burak Aslan; Isha M Datye; Michal J Mleczko; Karen Sze Cheung; Sergiy Krylyuk; Alina Bruma; Irina Kalish; Albert V Davydov; Eric Pop; Tony F Heinz
Journal:  Nano Lett       Date:  2018-03-29       Impact factor: 12.262

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