| Literature DB >> 25261743 |
Gabriele Gualco1, Jens Anders1, Andrzej Sienkiewicz1, Stefano Alberti1, László Forró1, Giovanni Boero2.
Abstract
We report on the design and characterization of a single-chip electron spin resonance detector, operating at a frequency of about 20 GHz and in a temperature range extending at least from 300 K down to 4 K. The detector consists of an LC oscillator formed by a 200 μm diameter single turn aluminum planar coil, a metal-oxide-metal capacitor, and two metal-oxide-semiconductor field effect transistors used as negative resistance network. At 300 K, the oscillator has a frequency noise of 20 Hz/Hz(1/2) at 100 kHz offset from the 20 GHz carrier. At 4 K, the frequency noise is about 1 Hz/Hz(1/2) at 10 kHz offset. The spin sensitivity measured with a sample of DPPH is 10(8)spins/Hz(1/2) at 300 K and down to 10(6)spins/Hz(1/2) at 4 K.Entities:
Keywords: CMOS; Cryogenic; ESR
Year: 2014 PMID: 25261743 DOI: 10.1016/j.jmr.2014.08.013
Source DB: PubMed Journal: J Magn Reson ISSN: 1090-7807 Impact factor: 2.229