| Literature DB >> 25147489 |
Jianwei Ji1, Guan Wang1, Xiaozeng You1, Xiangxing Xu1.
Abstract
Silicon quantum dots (Entities:
Keywords: N-vinylcarbazole; Silicon quantum dots; Spectroscopic property; Surface modification
Year: 2014 PMID: 25147489 PMCID: PMC4135341 DOI: 10.1186/1556-276X-9-384
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Figure 1Synthetic strategy of N-ec-Si QDs.
Figure 2Characterization of Si QDs and N-ec-Si QDs. (a) XRD pattern of the hydrogen-terminated Si QDs. (b) TEM image and HRTEM image (inset) of the N-ec-Si QDs (scale bar 20 nm, inset 2 nm). (c) Size distribution of the N-ec-Si QDs. (d) FTIR spectra of the N-ec-Si QDs and pure N-vinylcarbazole.
Figure 3Spectroscopic properties of N-ec-Si QDs and -vinylcarbazole in mesitylene solution. (a) UV spectra. (b) Photoluminescence spectra. (c) Excitation spectra. (d) PL decay curves. (excitation at 302 nm; emissions of 358 nm for N-ec-Si QDs and 366 nm for N-vinylcarbazole were adopted for the excitation spectra measurement).
Fitting parameters of the PL decay curves
| 366 | 0.27 | 3.5 | 0.58 | 0.42 | 0.998 | 3.2 | |
| N-ec-Si QDs | 358 | 0.35 | 4.6 | 0.98 | 0.02 | 0.997 | 1.4 |
a, i = 1, 2, n = 2.
Figure 4Photoluminescence spectra of N-ec-Si QDs (excitation 302 nm) and hydrogen-modified Si QDs (excitation 360 nm).