Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films.

High-k, low leakage thin films are crucial components for dynamic random access memory (DRAM) capacitors with high storage density and a long storage lifetime. In this work, we demonstrate a method to increase the dielectric constant and decrease the leakage current density of atomic layer deposited BaTiO3 thin films at low process temperature (250 °C) using postdeposition remote oxygen plasma treatment. The dielectric constant increased from 51 (as-deposited) to 122 (plasma-treated), and the leakage current density decreased by 1 order of magnitude. We ascribe such improvements to the crystallization and densification of the film induced by high-energy ion bombardments on the film surface during the plasma treatment. Plasma-induced crystallization presented in this work may have an immediate impact on fabricating and manufacturing DRAM capacitors due to its simplicity and compatibility with industrial standard thin film processes.