Literature DB >> 24713583

Silicon quantum dots: surface matters.

K Dohnalová1, T Gregorkiewicz, K Kůsová.   

Abstract

Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.

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Year:  2014        PMID: 24713583     DOI: 10.1088/0953-8984/26/17/173201

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  18 in total

Review 1.  Quantum Dot-Based Simultaneous Multicolor Imaging.

Authors:  Wenxia Wang; Zhen Liu; Xiaoli Lan
Journal:  Mol Imaging Biol       Date:  2020-08       Impact factor: 3.488

2.  Si nanocrystal solution with stability for one year.

Authors:  Daisuke Kajiya; Ken-Ichi Saitow
Journal:  RSC Adv       Date:  2018-12-11       Impact factor: 4.036

3.  Emission efficiency limit of Si nanocrystals.

Authors:  Rens Limpens; Stefan L Luxembourg; Arthur W Weeber; Tom Gregorkiewicz
Journal:  Sci Rep       Date:  2016-01-20       Impact factor: 4.379

4.  Changes of the absorption cross section of Si nanocrystals with temperature and distance.

Authors:  Michael Greben; Petro Khoroshyy; Sebastian Gutsch; Daniel Hiller; Margit Zacharias; Jan Valenta
Journal:  Beilstein J Nanotechnol       Date:  2017-11-06       Impact factor: 3.649

5.  Size confinement of Si nanocrystals in multinanolayer structures.

Authors:  Rens Limpens; Arnon Lesage; Minoru Fujii; Tom Gregorkiewicz
Journal:  Sci Rep       Date:  2015-11-25       Impact factor: 4.379

6.  Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Authors:  Martyna Grydlik; Florian Hackl; Heiko Groiss; Martin Glaser; Alma Halilovic; Thomas Fromherz; Wolfgang Jantsch; Friedrich Schäffler; Moritz Brehm
Journal:  ACS Photonics       Date:  2016-01-26       Impact factor: 7.529

7.  Sensitive detection of copper ions via ion-responsive fluorescence quenching of engineered porous silicon nanoparticles.

Authors:  Jangsun Hwang; Mintai P Hwang; Moonhyun Choi; Youngmin Seo; Yeonho Jo; Jaewoo Son; Jinkee Hong; Jonghoon Choi
Journal:  Sci Rep       Date:  2016-10-18       Impact factor: 4.379

8.  Integrating Quantum Dots and Dielectric Mie Resonators: A Hierarchical Metamaterial Inheriting the Best of Both.

Authors:  Antonio Capretti; Arnon Lesage; Tom Gregorkiewicz
Journal:  ACS Photonics       Date:  2017-08-03       Impact factor: 7.529

9.  Multi-chromatic silicon nanocrystals.

Authors:  Benjamin Bruhn; Benjamin Jm Brenny; Sidoeri Dekker; Ilker Doğan; Peter Schall; Katerina Dohnalová
Journal:  Light Sci Appl       Date:  2017-06-30       Impact factor: 17.782

10.  High Internal Emission Efficiency of Silicon Nanoparticles Emitting in the Visible Range.

Authors:  Bart van Dam; Clara I Osorio; Mark A Hink; Remmert Muller; A Femius Koenderink; Katerina Dohnalova
Journal:  ACS Photonics       Date:  2018-04-10       Impact factor: 7.529

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