| Literature DB >> 24339159 |
John Mann1, Quan Ma, Patrick M Odenthal, Miguel Isarraraz, Duy Le, Edwin Preciado, David Barroso, Koichi Yamaguchi, Gretel von Son Palacio, Andrew Nguyen, Tai Tran, Michelle Wurch, Ariana Nguyen, Velveth Klee, Sarah Bobek, Dezheng Sun, Tony F Heinz, Talat S Rahman, Roland Kawakami, Ludwig Bartels.
Abstract
MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2 ) to 1.55 eV (pure single-layer MoSe2 ) permitting straightforward bandgap engineering.Entities:
Keywords: CVD; alloys; atomically thin films; bandgap engineering; molybdenum diselenide; molybdenum disulfide; transition metal dichalcogenides
Year: 2013 PMID: 24339159 DOI: 10.1002/adma.201304389
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849