Literature DB >> 24229327

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Amit Prakash¹, Siddheswar Maikap, Hsien-Chin Chiu, Ta-Chang Tien, Chao-Sung Lai.
1. . amit.knp02@gmail.com.

Abstract

Year: 2013 PMID： 24229327 PMCID： PMC3853228 DOI： 10.1186/1556-276X-8-419

Source DB: PubMed Journal: Nanoscale Res Lett ISSN： 1556-276X Impact factor: 4.703

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Retraction

This article is retracted. The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

1 in total

1. Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Authors: Amit Prakash; Siddheswar Maikap; Hsien-Chin Chiu; Ta-Chang Tien; Chao-Sung Lai
Journal: Nanoscale Res Lett Date: 2013-10-22 Impact factor: 4.703

1 in total

8 in total

1. Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Authors: Amit Prakash; Siddheswar Maikap; Hsien-Chin Chiu; Ta-Chang Tien; Chao-Sung Lai
Journal: Nanoscale Res Lett Date: 2013-10-22 Impact factor: 4.703

2. Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

Authors: Amit Prakash; Siddheswar Maikap; Writam Banerjee; Debanjan Jana; Chao-Sung Lai
Journal: Nanoscale Res Lett Date: 2013-09-06 Impact factor: 4.703

3. Investigation of LRS dependence on the retention of HRS in CBRAM.

Authors: Xiaoxin Xu; Hangbing Lv; Hongtao Liu; Qing Luo; Tiancheng Gong; Ming Wang; Guoming Wang; Meiyun Zhang; Yang Li; Qi Liu; Shibing Long; Ming Liu
Journal: Nanoscale Res Lett Date: 2015-02-11 Impact factor: 4.703

4. Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.

Authors: Amit Prakash; Debanjan Jana; Subhranu Samanta; Siddheswar Maikap
Journal: Nanoscale Res Lett Date: 2013-12-17 Impact factor: 4.703

5. Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.

Authors: Sheikh Ziaur Rahaman; Siddheswar Maikap
Journal: Nanoscale Res Lett Date: 2013-12-05 Impact factor: 4.703

6. TaOx-based resistive switching memories: prospective and challenges.

Authors: Amit Prakash; Debanjan Jana; Siddheswar Maikap
Journal: Nanoscale Res Lett Date: 2013-10-09 Impact factor: 4.703

7. Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Authors: Fang Yuan; Zhigang Zhang; Jer-Chyi Wang; Liyang Pan; Jun Xu; Chao-Sung Lai
Journal: Nanoscale Res Lett Date: 2014-08-29 Impact factor: 4.703

8. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Authors: Sungjun Kim; Byung-Gook Park
Journal: Nanoscale Res Lett Date: 2016-08-12 Impact factor: 4.703

8 in total