| Literature DB >> 24187684 |
Hiroko Yamada1, Yuji Yamaguchi, Ryuta Katoh, Takao Motoyama, Tatsuya Aotake, Daiki Kuzuhara, Mitsuharu Suzuki, Tetsuo Okujima, Hidemitsu Uno, Naoki Aratani, Ken-ichi Nakayama.
Abstract
P-n junction solar cells based on anthradithiophene (ADT) as a p-type semiconductor were fabricated by using the photoprecursor method in which an α-diketone-type precursor was spin-coated and then transformed to ADT in situ by photoirradiation. Combination with PC71BM as an n-layer material led to 1.54% photoconversion efficiency.Entities:
Year: 2013 PMID: 24187684 DOI: 10.1039/c3cc46178e
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222