| Literature DB >> 24115285 |
Young Joon Hong1, Jae Won Yang, Wi Hyoung Lee, Rodney S Ruoff, Kwang S Kim, Takashi Fukui.
Abstract
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.Entities:
Keywords: double heterostructures; graphene; indium arsenide; metal-organic vapor-phase epitaxy; van der Waals epitaxy
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Year: 2013 PMID: 24115285 DOI: 10.1002/adma.201302312
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849