Literature DB >> 23913761

Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.

Xuyong Yang1, Evren Mutlugun, Yongbiao Zhao, Yuan Gao, Kheng Swee Leck, Yanyan Ma, Lin Ke, Swee Tiam Tan, Hilmi Volkan Demir, Xiao Wei Sun.   

Abstract

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  interfacial layer; light-emitting diodes; nanoparticles; quantum dots; solution processing; tungsten oxide

Year:  2013        PMID: 23913761     DOI: 10.1002/smll.201301199

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  2 in total

1.  Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes.

Authors:  Wei-Sheng Chen; Sheng-Hsiung Yang; Wei-Cheng Tseng; Wilson Wei-Sheng Chen; Yuan-Chang Lu
Journal:  ACS Omega       Date:  2021-05-12

2.  Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes.

Authors:  Su Been Heo; Jong Hun Yu; Minju Kim; Yeonjin Yi; Ji-Eun Lee; Han-Ki Kim; Seong Jun Kang
Journal:  RSC Adv       Date:  2019-04-16       Impact factor: 3.361

  2 in total

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