| Literature DB >> 23799923 |
Sheng-Rui Jian1, Huang-Wei Chang, Yu-Chin Tseng, Ping-Han Chen, Jenh-Yih Juang.
Abstract
The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall-Petch equation.Entities:
Year: 2013 PMID: 23799923 PMCID: PMC3695780 DOI: 10.1186/1556-276X-8-297
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Figure 1XRD patterns of BFO thin films deposited at various deposition temperatures. (a) 350°C, (b) 400°C, and (c) 450°C.
Figure 2AFM images of BFO thin films deposited at various deposition temperatures. (a) 350°C, (b) 400°C, and (c) 450°C, respectively.
Figure 3Nanoindentation results. (a) A typical load-displacement curve for BFO thin films deposited at 350°C. (b) The hardness-displacement curves. (c) Young's modulus-displacement curves for BFO thin films deposited at various deposition temperatures.
Hardness and Young's modulus of BFO thin films obtained from various deposition methods
| Radio frequency magnetron sputtering-derived BFOa | | |
| 350°C | 6.8 | 131.4 |
| 400°C | 8.5 | 147.6 |
| 450°C | 10.6 | 170.8 |
| Sol–gel-derived BFO [ | 2.8~3.8 | 26~51 |
aThe present work.
Figure 4Plot of the experimental data of hardness versus grain size. The dashed line represents a fit to the Hall–Petch equation with H(D) = 1.03 + 43.12 D−1/2.