| Literature DB >> 21702441 |
Rama K Vasudevan1, Yunya Liu, Jiangyu Li, Wen-I Liang, Amit Kumar, Stephen Jesse, Yi-Chun Chen, Ying-Hao Chu, Valanoor Nagarajan, Sergei V Kalinin.
Abstract
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO(3) (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T → R transition is activated at lower voltages compared to T → -T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.Year: 2011 PMID: 21702441 DOI: 10.1021/nl201719w
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189