Literature DB >> 23754439

Valley Chern numbers and boundary modes in gapped bilayer graphene.

Fan Zhang1, Allan H MacDonald, Eugene J Mele.   

Abstract

Electronic states at domain walls in bilayer graphene are studied by analyzing their four- and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.

Entities:  

Keywords:  few-layer graphene; layer-stacking walls; topological defects; topological states

Year:  2013        PMID: 23754439      PMCID: PMC3696819          DOI: 10.1073/pnas.1308853110

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  11 in total

1.  Transport spectroscopy of symmetry-broken insulating states in bilayer graphene.

Authors:  J Velasco; L Jing; W Bao; Y Lee; P Kratz; V Aji; M Bockrath; C N Lau; C Varma; R Stillwell; D Smirnov; Fan Zhang; J Jung; A H MacDonald
Journal:  Nat Nanotechnol       Date:  2012-01-22       Impact factor: 39.213

2.  Evidence for a spontaneous gapped state in ultraclean bilayer graphene.

Authors:  Wenzhong Bao; Jairo Velasco; Fan Zhang; Lei Jing; Brian Standley; Dmitry Smirnov; Marc Bockrath; Allan H MacDonald; Chun Ning Lau
Journal:  Proc Natl Acad Sci U S A       Date:  2012-06-08       Impact factor: 11.205

3.  Landau-level degeneracy and quantum Hall effect in a graphite bilayer.

Authors:  Edward McCann; Vladimir I Fal'ko
Journal:  Phys Rev Lett       Date:  2006-03-03       Impact factor: 9.161

4.  Controlling the electronic structure of bilayer graphene.

Authors:  Taisuke Ohta; Aaron Bostwick; Thomas Seyller; Karsten Horn; Eli Rotenberg
Journal:  Science       Date:  2006-08-18       Impact factor: 47.728

5.  Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.

Authors:  Eduardo V Castro; K S Novoselov; S V Morozov; N M R Peres; J M B Lopes dos Santos; Johan Nilsson; F Guinea; A K Geim; A H Castro Neto
Journal:  Phys Rev Lett       Date:  2007-11-20       Impact factor: 9.161

6.  Topological confinement in bilayer graphene.

Authors:  Ivar Martin; Ya M Blanter; A F Morpurgo
Journal:  Phys Rev Lett       Date:  2008-01-23       Impact factor: 9.161

7.  Local compressibility measurements of correlated states in suspended bilayer graphene.

Authors:  J Martin; B E Feldman; R T Weitz; M T Allen; A Yacoby
Journal:  Phys Rev Lett       Date:  2010-12-15       Impact factor: 9.161

8.  Electronic highways in bilayer graphene.

Authors:  Zhenhua Qiao; Jeil Jung; Qian Niu; Allan H Macdonald
Journal:  Nano Lett       Date:  2011-07-21       Impact factor: 11.189

9.  Spontaneous quantum Hall states in chirally stacked few-layer graphene systems.

Authors:  Fan Zhang; Jeil Jung; Gregory A Fiete; Qian Niu; Allan H MacDonald
Journal:  Phys Rev Lett       Date:  2011-04-11       Impact factor: 9.161

10.  Gate-induced insulating state in bilayer graphene devices.

Authors:  Jeroen B Oostinga; Hubert B Heersche; Xinglan Liu; Alberto F Morpurgo; Lieven M K Vandersypen
Journal:  Nat Mater       Date:  2007-12-02       Impact factor: 43.841

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  30 in total

1.  Strain solitons and topological defects in bilayer graphene.

Authors:  Jonathan S Alden; Adam W Tsen; Pinshane Y Huang; Robert Hovden; Lola Brown; Jiwoong Park; David A Muller; Paul L McEuen
Journal:  Proc Natl Acad Sci U S A       Date:  2013-06-24       Impact factor: 11.205

2.  Experimental realization of a reconfigurable electroacoustic topological insulator.

Authors:  Amir Darabi; Manuel Collet; Michael J Leamy
Journal:  Proc Natl Acad Sci U S A       Date:  2020-06-29       Impact factor: 11.205

3.  Topological valley transport at bilayer graphene domain walls.

Authors:  Long Ju; Zhiwen Shi; Nityan Nair; Yinchuan Lv; Chenhao Jin; Jairo Velasco; Claudia Ojeda-Aristizabal; Hans A Bechtel; Michael C Martin; Alex Zettl; James Analytis; Feng Wang
Journal:  Nature       Date:  2015-04-22       Impact factor: 49.962

4.  Electric field control of soliton motion and stacking in trilayer graphene.

Authors:  Matthew Yankowitz; Joel I-Jan Wang; A Glen Birdwell; Yu-An Chen; K Watanabe; T Taniguchi; Philippe Jacquod; Pablo San-Jose; Pablo Jarillo-Herrero; Brian J LeRoy
Journal:  Nat Mater       Date:  2014-04-28       Impact factor: 43.841

5.  Soliton-dependent plasmon reflection at bilayer graphene domain walls.

Authors:  Lili Jiang; Zhiwen Shi; Bo Zeng; Sheng Wang; Ji-Hun Kang; Trinity Joshi; Chenhao Jin; Long Ju; Jonghwan Kim; Tairu Lyu; Yuen-Ron Shen; Michael Crommie; Hong-Jun Gao; Feng Wang
Journal:  Nat Mater       Date:  2016-05-30       Impact factor: 43.841

6.  Gate-controlled topological conducting channels in bilayer graphene.

Authors:  Jing Li; Ke Wang; Kenton J McFaul; Zachary Zern; Yafei Ren; Kenji Watanabe; Takashi Taniguchi; Zhenhua Qiao; Jun Zhu
Journal:  Nat Nanotechnol       Date:  2016-08-29       Impact factor: 39.213

7.  Unconventional superconductivity in magic-angle graphene superlattices.

Authors:  Yuan Cao; Valla Fatemi; Shiang Fang; Kenji Watanabe; Takashi Taniguchi; Efthimios Kaxiras; Pablo Jarillo-Herrero
Journal:  Nature       Date:  2018-03-05       Impact factor: 49.962

8.  Strain engineering of electronic properties and anomalous valley hall conductivity of transition metal dichalcogenide nanoribbons.

Authors:  Farzaneh Shayeganfar
Journal:  Sci Rep       Date:  2022-07-04       Impact factor: 4.996

9.  Topological protection of multiparticle dissipative transport.

Authors:  Johannes Loehr; Michael Loenne; Adrian Ernst; Daniel de Las Heras; Thomas M Fischer
Journal:  Nat Commun       Date:  2016-06-01       Impact factor: 14.919

10.  Effects of intervalley scattering on the transport properties in one-dimensional valleytronic devices.

Authors:  Jiaojiao Zhou; Shuguang Cheng; Wen-Long You; Hua Jiang
Journal:  Sci Rep       Date:  2016-03-16       Impact factor: 4.379

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