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Literature DB >> 23685862

Ferroelectric tunnel junctions: Beyond the barrier.

E Y Tsymbal, A Gruverman.

Abstract

Year: 2013 PMID： 23685862 DOI： 10.1038/nmat3669

Source DB: PubMed Journal: Nat Mater ISSN： 1476-1122 Impact factor: 43.841

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11 in total

1. Solid-state memories based on ferroelectric tunnel junctions.

Authors: André Chanthbouala; Arnaud Crassous; Vincent Garcia; Karim Bouzehouane; Stéphane Fusil; Xavier Moya; Julie Allibe; Bruno Dlubak; Julie Grollier; Stéphane Xavier; Cyrile Deranlot; Amir Moshar; Roger Proksch; Neil D Mathur; Manuel Bibes; Agnès Barthélémy
Journal: Nat Nanotechnol Date: 2011-12-04 Impact factor: 39.213

2. Ferroelectricity and tetragonality in ultrathin PbTiO3 films.

Authors: Céline Lichtensteiger; Jean-Marc Triscone; Javier Junquera; Philippe Ghosez
Journal: Phys Rev Lett Date: 2005-02-03 Impact factor: 9.161

3. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

Authors: D A Tenne; A Bruchhausen; N D Lanzillotti-Kimura; A Fainstein; R S Katiyar; A Cantarero; A Soukiassian; V Vaithyanathan; J H Haeni; W Tian; D G Schlom; K J Choi; D M Kim; C B Eom; H P Sun; X Q Pan; Y L Li; L Q Chen; Q X Jia; S M Nakhmanson; K M Rabe; X X Xi
Journal: Science Date: 2006-09-15 Impact factor: 47.728

4. Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

Authors: V Garcia; S Fusil; K Bouzehouane; S Enouz-Vedrenne; N D Mathur; A Barthélémy; M Bibes
Journal: Nature Date: 2009-05-31 Impact factor: 49.962

5. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.

Authors: A Gruverman; D Wu; H Lu; Y Wang; H W Jang; C M Folkman; M Ye Zhuravlev; D Felker; M Rzchowski; C-B Eom; E Y Tsymbal
Journal: Nano Lett Date: 2009-10 Impact factor: 11.189

6. Polarization control of electron tunneling into ferroelectric surfaces.

Authors: Peter Maksymovych; Stephen Jesse; Pu Yu; Ramamoorthy Ramesh; Arthur P Baddorf; Sergei V Kalinin
Journal: Science Date: 2009-06-12 Impact factor: 47.728

7. Reversible electrical switching of spin polarization in multiferroic tunnel junctions.

Authors: D Pantel; S Goetze; D Hesse; M Alexe
Journal: Nat Mater Date: 2012-02-26 Impact factor: 43.841

8. A ferroelectric memristor.

Authors: André Chanthbouala; Vincent Garcia; Ryan O Cherifi; Karim Bouzehouane; Stéphane Fusil; Xavier Moya; Stéphane Xavier; Hiroyuki Yamada; Cyrile Deranlot; Neil D Mathur; Manuel Bibes; Agnès Barthélémy; Julie Grollier
Journal: Nat Mater Date: 2012-09-16 Impact factor: 43.841

Ferroelectric tunnel junctions: Beyond the barrier.

1. Solid-state memories based on ferroelectric tunnel junctions.

2. Ferroelectricity and tetragonality in ultrathin PbTiO3 films.

3. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

4. Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

5. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.

6. Polarization control of electron tunneling into ferroelectric surfaces.

7. Reversible electrical switching of spin polarization in multiferroic tunnel junctions.

8. A ferroelectric memristor.

9. Ferroelectric tunnel memristor.

10. Applications of modern ferroelectrics.

1. Domain control of carrier density at a semiconductor-ferroelectric interface.

2. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

3. Encoding, training and retrieval in ferroelectric tunnel junctions.

4. Interface-engineered electron and hole tunneling.

5. Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction.