Literature DB >> 17303745

Applications of modern ferroelectrics.

J F Scott1.   

Abstract

Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.

Entities:  

Year:  2007        PMID: 17303745     DOI: 10.1126/science.1129564

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  124 in total

1.  Revealing the role of defects in ferroelectric switching with atomic resolution.

Authors:  Peng Gao; Christopher T Nelson; Jacob R Jokisaari; Seung-Hyub Baek; Chung Wung Bark; Yi Zhang; Enge Wang; Darrell G Schlom; Chang-Beom Eom; Xiaoqing Pan
Journal:  Nat Commun       Date:  2011-12-20       Impact factor: 14.919

2.  Ferroelectric order in individual nanometre-scale crystals.

Authors:  Mark J Polking; Myung-Geun Han; Amin Yourdkhani; Valeri Petkov; Christian F Kisielowski; Vyacheslav V Volkov; Yimei Zhu; Gabriel Caruntu; A Paul Alivisatos; Ramamoorthy Ramesh
Journal:  Nat Mater       Date:  2012-07-08       Impact factor: 43.841

3.  An insight into the origin of low-symmetry bridging phase and enhanced functionality in systems containing competing phases.

Authors:  Lingping Kong; Gang Liu; Wenge Yang; Wenwu Cao
Journal:  Appl Phys Lett       Date:  2015-07-27       Impact factor: 3.791

4.  Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films.

Authors:  J C Agar; A R Damodaran; M B Okatan; J Kacher; C Gammer; R K Vasudevan; S Pandya; L R Dedon; R V K Mangalam; G A Velarde; S Jesse; N Balke; A M Minor; S V Kalinin; L W Martin
Journal:  Nat Mater       Date:  2016-02-15       Impact factor: 43.841

5.  Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories.

Authors:  Zhijun Hu; Mingwen Tian; Bernard Nysten; Alain M Jonas
Journal:  Nat Mater       Date:  2008-12-07       Impact factor: 43.841

6.  Ferroelectric polarization reversal via successive ferroelastic transitions.

Authors:  Ruijuan Xu; Shi Liu; Ilya Grinberg; J Karthik; Anoop R Damodaran; Andrew M Rappe; Lane W Martin
Journal:  Nat Mater       Date:  2014-10-26       Impact factor: 43.841

Review 7.  Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

Authors:  Ying Wang; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-11       Impact factor: 3.623

8.  Slush-like polar structures in single-crystal relaxors.

Authors:  Hiroyuki Takenaka; Ilya Grinberg; Shi Liu; Andrew M Rappe
Journal:  Nature       Date:  2017-06-14       Impact factor: 49.962

9.  Theory of electric creep and electromechanical coupling with domain evolution for non-poled and fully poled ferroelectric ceramics.

Authors:  Xiaodong Xia; Yang Wang; Zheng Zhong; George J Weng
Journal:  Proc Math Phys Eng Sci       Date:  2016-10       Impact factor: 2.704

10.  1,4-Diazo-niabicyclo-[2.2.2]octane tetra-chloridozincate monohydrate.

Authors:  Fangming Wang
Journal:  Acta Crystallogr Sect E Struct Rep Online       Date:  2009-04-25
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