| Literature DB >> 23527543 |
Gwangwoo Kim1, A-Rang Jang, Hu Young Jeong, Zonghoon Lee, Dae Joon Kang, Hyeon Suk Shin.
Abstract
Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. Herein, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure chemical vapor deposition method that allowed h-BN to be grown over a wide area (8 × 25 mm(2)). An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV-visible absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution transmission electron microscopy image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. This method of growing single-layer h-BN over large areas was also compatible with use of a sapphire substrate.Entities:
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Year: 2013 PMID: 23527543 DOI: 10.1021/nl400559s
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189