Literature DB >> 23473203

Yellow luminescence of gallium nitride generated by carbon defect complexes.

D O Demchenko1, I C Diallo, M A Reshchikov.   

Abstract

We demonstrate that yellow luminescence often observed in both carbon-doped and pristine GaN is the result of electronic transitions via the C(N)-O(N) complex. In contrast to common isolated defects, the C(N)-O(N) complex is energetically favorable, and its calculated optical properties, such as absorption and emission energies, a zero phonon line, and the thermodynamic transition level, all show excellent agreement with measured luminescence data. Thus, by combining hybrid density functional theory and experimental measurements, we propose a solution to a long-standing problem of the GaN yellow luminescence.

Entities:  

Year:  2013        PMID: 23473203     DOI: 10.1103/PhysRevLett.110.087404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Three-dimensional Aerographite-GaN hybrid networks: single step fabrication of porous and mechanically flexible materials for multifunctional applications.

Authors:  Arnim Schuchardt; Tudor Braniste; Yogendra K Mishra; Mao Deng; Matthias Mecklenburg; Marion A Stevens-Kalceff; Simion Raevschi; Karl Schulte; Lorenz Kienle; Rainer Adelung; Ion Tiginyanu
Journal:  Sci Rep       Date:  2015-03-06       Impact factor: 4.379

2.  Visualization of GaN surface potential using terahertz emission enhanced by local defects.

Authors:  Yuji Sakai; Iwao Kawayama; Hidetoshi Nakanishi; Masayoshi Tonouchi
Journal:  Sci Rep       Date:  2015-09-09       Impact factor: 4.379

3.  Two yellow luminescence bands in undoped GaN.

Authors:  M A Reshchikov; J D McNamara; H Helava; A Usikov; Yu Makarov
Journal:  Sci Rep       Date:  2018-05-25       Impact factor: 4.379

Review 4.  Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

Authors:  Kalparupa Mukherjee; Carlo De Santi; Matteo Borga; Karen Geens; Shuzhen You; Benoit Bakeroot; Stefaan Decoutere; Patrick Diehle; Susanne Hübner; Frank Altmann; Matteo Buffolo; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
Journal:  Materials (Basel)       Date:  2021-04-29       Impact factor: 3.623

5.  Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

Authors:  Alice Hospodková; Jakub Čížek; František Hájek; Tomáš Hubáček; Jiří Pangrác; Filip Dominec; Karla Kuldová; Jan Batysta; Maciej O Liedke; Eric Hirschmann; Maik Butterling; Andreas Wagner
Journal:  Materials (Basel)       Date:  2022-10-05       Impact factor: 3.748

  5 in total

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