Literature DB >> 23452335

Effect of functional groups on the sensing properties of silicon nanowires toward volatile compounds.

Bin Wang1, Hossam Haick.   

Abstract

Molecular layers attached to a silicon nanowire field effect transistor (SiNW FET) can serve as antennas for signal transduction of volatile organic compounds (VOCs). Nevertheless, the mutual relationship between the molecular layers and VOCs is still a puzzle. In the present paper, we explore the effect of the molecular layer's end (functional) groups on the sensing properties of VOCs. Toward this end, SiNW FETs were modified with tailor-made molecular layers that have the same backbone but differ in their end groups. Changes in the threshold voltage (ΔVth) and changes in the mobility (Δμh) were then recorded upon exposure to various VOCs. Model-based analysis indicates that the interaction between molecular layers and VOCs can be classified to three main scenarios: (a) dipole-dipole interaction between the molecular layer and the polar VOCs; (b) induced dipole-dipole interaction between the molecular layers and the nonpolar VOCs; and (c) molecular layer tilt as a result of VOCs diffusion. Based on these scenarios, it is likely that the electron-donating/withdrawing properties of the functional groups control the dipole moment orientation of the adsorbed VOCs and, as a result, determine the direction (or sign) of the ΔVth. Additionally, it is likely the diffusion of VOCs into the molecular layer, determined by the type of functional groups, is the main reason for the Δμh responses. The reported findings are expected to provide an efficient way to design chemical sensors that are based on SiNW FETs to nonpolar VOCs, which do not exchange carriers with the molecular layers.

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Year:  2013        PMID: 23452335     DOI: 10.1021/am4004649

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  8 in total

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Authors:  Marleen Mescher; Aldo G M Brinkman; Duco Bosma; Johan H Klootwijk; Ernst J R Sudhölter; Louis C P M de Smet
Journal:  Sensors (Basel)       Date:  2014-01-29       Impact factor: 3.576

2.  Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.

Authors:  Alex C Tseng; David Lynall; Igor Savelyev; Marina Blumin; Shiliang Wang; Harry E Ruda
Journal:  Sensors (Basel)       Date:  2017-07-16       Impact factor: 3.576

Review 3.  Functionalization and Characterization of Silicon Nanowires for Sensing Applications: A Review.

Authors:  Samuel Ahoulou; Etienne Perret; Jean-Marie Nedelec
Journal:  Nanomaterials (Basel)       Date:  2021-04-13       Impact factor: 5.076

4.  Silicon nanowire-based devices for gas-phase sensing.

Authors:  Anping Cao; Ernst J R Sudhölter; Louis C P M de Smet
Journal:  Sensors (Basel)       Date:  2013-12-24       Impact factor: 3.576

Review 5.  One-dimensional nanostructure field-effect sensors for gas detection.

Authors:  Xiaoli Zhao; Bin Cai; Qingxin Tang; Yanhong Tong; Yichun Liu
Journal:  Sensors (Basel)       Date:  2014-07-31       Impact factor: 3.576

6.  Detection of Volatile Organic Compounds by Self-assembled Monolayer Coated Sensor Array with Concentration-independent Fingerprints.

Authors:  Ye Chang; Ning Tang; Hemi Qu; Jing Liu; Daihua Zhang; Hao Zhang; Wei Pang; Xuexin Duan
Journal:  Sci Rep       Date:  2016-04-05       Impact factor: 4.379

7.  Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons.

Authors:  Ye Chang; Zhipeng Hui; Xiayu Wang; Hemi Qu; Wei Pang; Xuexin Duan
Journal:  Sensors (Basel)       Date:  2018-01-25       Impact factor: 3.576

Review 8.  CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization.

Authors:  Duy Phu Tran; Thuy Thi Thanh Pham; Bernhard Wolfrum; Andreas Offenhäusser; Benjamin Thierry
Journal:  Materials (Basel)       Date:  2018-05-11       Impact factor: 3.623

  8 in total

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