Literature DB >> 23414038

Role of thermal heating on the voltage induced insulator-metal transition in VO2.

A Zimmers1, L Aigouy, M Mortier, A Sharoni, Siming Wang, K G West, J G Ramirez, Ivan K Schuller.   

Abstract

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Entities:  

Year:  2013        PMID: 23414038     DOI: 10.1103/PhysRevLett.110.056601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  22 in total

1.  Operando characterization of conductive filaments during resistive switching in Mott VO2.

Authors:  Shaobo Cheng; Min-Han Lee; Xing Li; Lorenzo Fratino; Federico Tesler; Myung-Geun Han; Javier Del Valle; R C Dynes; Marcelo J Rozenberg; Ivan K Schuller; Yimei Zhu
Journal:  Proc Natl Acad Sci U S A       Date:  2021-03-02       Impact factor: 11.205

2.  Metal oxide chips show promise.

Authors:  Eugenie Samuel Reich
Journal:  Nature       Date:  2013-03-07       Impact factor: 49.962

3.  Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide.

Authors:  Justin S Brockman; Li Gao; Brian Hughes; Charles T Rettner; Mahesh G Samant; Kevin P Roche; Stuart S P Parkin
Journal:  Nat Nanotechnol       Date:  2014-04-20       Impact factor: 39.213

4.  A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

Authors:  Guanxiong Liu; Bishwajit Debnath; Timothy R Pope; Tina T Salguero; Roger K Lake; Alexander A Balandin
Journal:  Nat Nanotechnol       Date:  2016-07-04       Impact factor: 39.213

5.  Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.

Authors:  G Mazza; A Amaricci; M Capone; M Fabrizio
Journal:  Phys Rev Lett       Date:  2016-10-20       Impact factor: 9.161

6.  Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

Authors:  Min-Woo Kim; Wan-Gil Jung; Tae-Sung Bae; Sung-Jin Chang; Ja-Soon Jang; Woong-Ki Hong; Bong-Joong Kim
Journal:  Sci Rep       Date:  2015-06-04       Impact factor: 4.379

7.  In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition.

Authors:  Xinfeng He; Tao Xu; Xiaofeng Xu; Yijie Zeng; Jing Xu; Litao Sun; Chunrui Wang; Huaizhong Xing; Binhe Wu; Aijiang Lu; Dingquan Liu; Xiaoshuang Chen; Junhao Chu
Journal:  Sci Rep       Date:  2014-10-08       Impact factor: 4.379

8.  High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation.

Authors:  Tony Yamin; Yakov M Strelniker; Amos Sharoni
Journal:  Sci Rep       Date:  2016-01-19       Impact factor: 4.379

9.  Wafer-scale growth of VO2 thin films using a combinatorial approach.

Authors:  Hai-Tian Zhang; Lei Zhang; Debangshu Mukherjee; Yuan-Xia Zheng; Ryan C Haislmaier; Nasim Alem; Roman Engel-Herbert
Journal:  Nat Commun       Date:  2015-10-09       Impact factor: 14.919

10.  A steep-slope transistor based on abrupt electronic phase transition.

Authors:  Nikhil Shukla; Arun V Thathachary; Ashish Agrawal; Hanjong Paik; Ahmedullah Aziz; Darrell G Schlom; Sumeet Kumar Gupta; Roman Engel-Herbert; Suman Datta
Journal:  Nat Commun       Date:  2015-08-07       Impact factor: 14.919

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.