Literature DB >> 23394463

Aerosol jet printed, low voltage, electrolyte gated carbon nanotube ring oscillators with sub-5 μs stage delays.

Mingjing Ha1, Jung-Woo T Seo, Pradyumna L Prabhumirashi, Wei Zhang, Michael L Geier, Michael J Renn, Chris H Kim, Mark C Hersam, C Daniel Frisbie.   

Abstract

A central challenge for printed electronics is to achieve high operating frequencies (short transistor switching times) at low supply biases compatible with thin film batteries. In this report, we demonstrate partially printed five-stage ring oscillators with >20 kHz operating frequencies and stage delays <5 μs at supply voltages below 3 V. The fastest ring oscillator achieved 1.2 μs delay time at 2 V supply. The inverter stages in these ring oscillators were based on ambipolar thin film transistors (TFTs) employing semiconducting, single-walled carbon nanotube (CNT) networks and a high capacitance (∼1 μF/cm(2)) ion gel electrolyte as the gate dielectric. All materials except the source and drain electrodes were aerosol jet printed. The TFTs exhibited high electron and hole mobilities (∼20 cm(2)/(V s)) and ON/OFF current ratios (up to 10(5)). Inverter switching times t were systematically characterized as a function of transistor channel length and ionic conductivity of the gel dielectric, demonstrating that both the semiconductor and the ion gel play a role in switching speed. Quantitative scaling analysis suggests that with suitable optimization low voltage, printed ion gel gated CNT inverters could operate at frequencies on the order of 1 MHz.

Entities:  

Year:  2013        PMID: 23394463     DOI: 10.1021/nl3038773

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  18 in total

1.  Solution-processed carbon nanotube thin-film complementary static random access memory.

Authors:  Michael L Geier; Julian J McMorrow; Weichao Xu; Jian Zhu; Chris H Kim; Tobin J Marks; Mark C Hersam
Journal:  Nat Nanotechnol       Date:  2015-09-07       Impact factor: 39.213

2.  Electronics based on two-dimensional materials.

Authors:  Gianluca Fiori; Francesco Bonaccorso; Giuseppe Iannaccone; Tomás Palacios; Daniel Neumaier; Alan Seabaugh; Sanjay K Banerjee; Luigi Colombo
Journal:  Nat Nanotechnol       Date:  2014-10       Impact factor: 39.213

3.  Polymers for 3D Printing and Customized Additive Manufacturing.

Authors:  Samuel Clark Ligon; Robert Liska; Jürgen Stampfl; Matthias Gurr; Rolf Mülhaupt
Journal:  Chem Rev       Date:  2017-07-30       Impact factor: 60.622

4.  High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

Authors:  Shu-Jen Han; Jianshi Tang; Bharat Kumar; Abram Falk; Damon Farmer; George Tulevski; Keith Jenkins; Ali Afzali; Satoshi Oida; John Ott; James Hannon; Wilfried Haensch
Journal:  Nat Nanotechnol       Date:  2017-07-03       Impact factor: 39.213

Review 5.  Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future.

Authors:  Alexander Corletto; Joseph G Shapter
Journal:  Adv Sci (Weinh)       Date:  2020-11-23       Impact factor: 16.806

6.  In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability.

Authors:  Jorge A Cardenas; Shiheng Lu; Nicholas X Williams; James L Doherty; Aaron D Franklin
Journal:  IEEE Electron Device Lett       Date:  2021-02-01       Impact factor: 4.187

7.  Electrically induced ambipolar spin vanishments in carbon nanotubes.

Authors:  D Matsumoto; K Yanagi; T Takenobu; S Okada; K Marumoto
Journal:  Sci Rep       Date:  2015-07-07       Impact factor: 4.379

8.  Integrated Ring Oscillators based on high-performance Graphene Inverters.

Authors:  Daniel Schall; Martin Otto; Daniel Neumaier; Heinrich Kurz
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  Carbon Nanotube Flexible and Stretchable Electronics.

Authors:  Le Cai; Chuan Wang
Journal:  Nanoscale Res Lett       Date:  2015-08-12       Impact factor: 4.703

10.  Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.

Authors:  Stefan P Schiessl; Nils Fröhlich; Martin Held; Florentina Gannott; Manuel Schweiger; Michael Forster; Ullrich Scherf; Jana Zaumseil
Journal:  ACS Appl Mater Interfaces       Date:  2014-12-19       Impact factor: 9.229

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