Literature DB >> 23110779

Electronic structure investigation of MoS2 and MoSe2 using angle-resolved photoemission spectroscopy and ab initio band structure studies.

S K Mahatha1, K D Patel, Krishnakumar S R Menon.   

Abstract

Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

Entities:  

Year:  2012        PMID: 23110779     DOI: 10.1088/0953-8984/24/47/475504

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  9 in total

1.  Pressure induced metallization with absence of structural transition in layered molybdenum diselenide.

Authors:  Zhao Zhao; Haijun Zhang; Hongtao Yuan; Shibing Wang; Yu Lin; Qiaoshi Zeng; Gang Xu; Zhenxian Liu; G K Solanki; K D Patel; Yi Cui; Harold Y Hwang; Wendy L Mao
Journal:  Nat Commun       Date:  2015-06-19       Impact factor: 14.919

2.  Highly responsive MoS2 photodetectors enhanced by graphene quantum dots.

Authors:  Caiyun Chen; Hong Qiao; Shenghuang Lin; Chi Man Luk; Yan Liu; Zaiquan Xu; Jingchao Song; Yunzhou Xue; Delong Li; Jian Yuan; Wenzhi Yu; Chunxu Pan; Shu Ping Lau; Qiaoliang Bao
Journal:  Sci Rep       Date:  2015-07-03       Impact factor: 4.379

3.  Theoretical prediction of electronic structure and carrier mobility in single-walled MoS₂ nanotubes.

Authors:  Jin Xiao; Mengqiu Long; Xinmei Li; Hui Xu; Han Huang; Yongli Gao
Journal:  Sci Rep       Date:  2014-03-10       Impact factor: 4.379

4.  Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals.

Authors:  Mathias Gehlmann; Irene Aguilera; Gustav Bihlmayer; Ewa Młyńczak; Markus Eschbach; Sven Döring; Pika Gospodarič; Stefan Cramm; Beata Kardynał; Lukasz Plucinski; Stefan Blügel; Claus M Schneider
Journal:  Sci Rep       Date:  2016-06-01       Impact factor: 4.379

5.  Electronic structure and thermoelectric properties of Mo-based dichalcogenide monolayers locally and randomly modified by substitutional atoms.

Authors:  M Vallinayagam; M Posselt; S Chandra
Journal:  RSC Adv       Date:  2020-11-26       Impact factor: 3.361

6.  Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides.

Authors:  Humberto Terrones; Florentino López-Urías; Mauricio Terrones
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

7.  Excitation energy dependent Raman spectrum of MoSe2.

Authors:  Dahyun Nam; Jae-Ung Lee; Hyeonsik Cheong
Journal:  Sci Rep       Date:  2015-11-25       Impact factor: 4.379

8.  Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

Authors:  Natalia Cortés; Luis Rosales; Pedro A Orellana; Andrés Ayuela; Jhon W González
Journal:  Sci Rep       Date:  2018-02-01       Impact factor: 4.379

9.  New first order Raman-active modes in few layered transition metal dichalcogenides.

Authors:  H Terrones; E Del Corro; S Feng; J M Poumirol; D Rhodes; D Smirnov; N R Pradhan; Z Lin; M A T Nguyen; A L Elías; T E Mallouk; L Balicas; M A Pimenta; M Terrones
Journal:  Sci Rep       Date:  2014-02-27       Impact factor: 4.379

  9 in total

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