Literature DB >> 23082071

Measuring central-spin interaction with a spin-bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence.

S J Balian1, M B A Kunze, M H Mohammady, G W Morley, W M Witzel, C W M Kay, T S Monteiro.   

Abstract

We present pulsed electron-nuclear double resonance (ENDOR) experiments which enable us to characterize the coupling between bismuth donor spin-qubits in Si and the surrounding spin-bath of (29)Si impurities which provides the dominant decoherence mechanism (nuclear spin diffusion) at low temperatures (< 16 K). Decoupling from the spin-bath is predicted and cluster correlation expansion simulations show near-complete suppression of spin diffusion, at optimal working points. The suppression takes the form of sharply peaked divergences of the spin diffusion coherence time, in contrast with previously identified broader regions of insensitivity to classical fluctuations. ENDOR data shows anisotropic contributions are comparatively weak, so the form of the divergences is independent of crystal orientation.

Entities:  

Year:  2012        PMID: 23082071      PMCID: PMC3472357          DOI: 10.1103/PhysRevB.86.104428

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter Mater Phys        ISSN: 1098-0121


  19 in total

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Journal:  Phys Rev Lett       Date:  2003-09-25       Impact factor: 9.161

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4.  Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si.

Authors:  T Sekiguchi; M Steger; K Saeedi; M L W Thewalt; H Riemann; N V Abrosimov; N Nötzel
Journal:  Phys Rev Lett       Date:  2010-04-02       Impact factor: 9.161

5.  Single-shot readout of an electron spin in silicon.

Authors:  Andrea Morello; Jarryd J Pla; Floris A Zwanenburg; Kok W Chan; Kuan Y Tan; Hans Huebl; Mikko Möttönen; Christopher D Nugroho; Changyi Yang; Jessica A van Donkelaar; Andrew D C Alves; David N Jamieson; Christopher C Escott; Lloyd C L Hollenberg; Robert G Clark; Andrew S Dzurak
Journal:  Nature       Date:  2010-09-26       Impact factor: 49.962

6.  Electron spin coherence exceeding seconds in high-purity silicon.

Authors:  Alexei M Tyryshkin; Shinichi Tojo; John J L Morton; Helge Riemann; Nikolai V Abrosimov; Peter Becker; Hans-Joachim Pohl; Thomas Schenkel; Michael L W Thewalt; Kohei M Itoh; S A Lyon
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7.  Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si.

Authors:  Richard E George; Wayne Witzel; H Riemann; N V Abrosimov; N Nötzel; Mike L W Thewalt; John J L Morton
Journal:  Phys Rev Lett       Date:  2010-08-06       Impact factor: 9.161

8.  The initialization and manipulation of quantum information stored in silicon by bismuth dopants.

Authors:  Gavin W Morley; Marc Warner; A Marshall Stoneham; P Thornton Greenland; Johan van Tol; Christopher W M Kay; Gabriel Aeppli
Journal:  Nat Mater       Date:  2010-08-15       Impact factor: 43.841

9.  Nuclear spins of ionized phosphorus donors in silicon.

Authors:  Lukas Dreher; Felix Hoehne; Martin Stutzmann; Martin S Brandt
Journal:  Phys Rev Lett       Date:  2012-01-11       Impact factor: 9.161

10.  Long-lived spin coherence in silicon with an electrical spin trap readout.

Authors:  G W Morley; D R McCamey; H A Seipel; L-C Brunel; J van Tol; C Boehme
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  3 in total

1.  Atomic clock transitions in silicon-based spin qubits.

Authors:  Gary Wolfowicz; Alexei M Tyryshkin; Richard E George; Helge Riemann; Nikolai V Abrosimov; Peter Becker; Hans-Joachim Pohl; Mike L W Thewalt; Stephen A Lyon; John J L Morton
Journal:  Nat Nanotechnol       Date:  2013-06-23       Impact factor: 39.213

2.  Transition metal atom (Ti, V, Mn, Fe, and Co) anchored silicene for hydrogen evolution reaction.

Authors:  Yongxiu Sun; Aijian Huang; Zhiguo Wang
Journal:  RSC Adv       Date:  2019-08-22       Impact factor: 4.036

3.  Tunable electron property induced by B-doping in g-C3N4.

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Journal:  RSC Adv       Date:  2021-04-27       Impact factor: 4.036

  3 in total

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