Boron carbide phases exist over a widely varying compos-itional range B(12+x)C(3-x) (0.06 < x < 1.7). One idealized structure corresponds to the B(13)C(2) composition (space group R-3m) and contains one icosa-hedral B(12) unit and one linear C-B-C chain. The B(12) units are composed of crystallographically distinct B atoms B(P) (polar, B1) and B(Eq) (equatorial, B2). Boron icosa-hedra are inter-connected by C atoms via their B(Eq) atoms, forming layers parallel to (001), while the B(12) units of the adjacent layers are linked through inter-icosa-hedral B(P)-B(P) bonds. The unique B atom (B(C)) connects the two C atoms of adjacent layers, forming a C-B-C chain along [001]. Depending on the carbon concentration, the carbon and B(P) sites exhibit mixed B/C occupancies to varying degrees; besides, the B(C) site shows partial occupancy. The decrease in carbon content was reported to be realized via an increasing number of chainless unit cells. On the basis of X-ray single-crystal refinement, we have concluded that the unit cell of the given boron-rich crystal contains following structural units: [B(12)] and [B(11)C] icosa-hedra (about 96 and 4%, respectively) and C-B-C chains (87%). Besides, there is a fraction of unit cells (13%) with the B atom located against the triangular face of a neighboring icosa-hedron formed by B(Eq) (B2) thus rendering the formula B(0.87)(B(0.98)C(0.02))(12)(B(0.13)C(0.87))(2) for the current boron carbide crystal.
Boron carbide phases exist over a widely varying compos-itional range B(12+x)C(3-x) (0.06 < x < 1.7). One idealized structure corresponds to the B(13)C(2) composition (space group R-3m) and contains one icosa-hedral B(12) unit and one linear C-B-C chain. The B(12) units are composed of crystallographically distinct B atoms B(P) (polar, B1) and B(Eq) (equatorial, B2). Boron icosa-hedra are inter-connected by C atoms via their B(Eq) atoms, forming layers parallel to (001), while the B(12) units of the adjacent layers are linked through inter-icosa-hedral B(P)-B(P) bonds. The unique B atom (B(C)) connects the two C atoms of adjacent layers, forming a C-B-C chain along [001]. Depending on the carbon concentration, the carbon and B(P) sites exhibit mixed B/C occupancies to varying degrees; besides, the B(C) site shows partial occupancy. The decrease in carbon content was reported to be realized via an increasing number of chainless unit cells. On the basis of X-ray single-crystal refinement, we have concluded that the unit cell of the given boron-rich crystal contains following structural units: [B(12)] and [B(11)C] icosa-hedra (about 96 and 4%, respectively) and C-B-C chains (87%). Besides, there is a fraction of unit cells (13%) with the B atom located against the triangular face of a neighboring icosa-hedron formed by B(Eq) (B2) thus rendering the formula B(0.87)(B(0.98)C(0.02))(12)(B(0.13)C(0.87))(2) for the current boron carbide crystal.
Rigaku AFC 7R diffractometer1489 measured reflections284 independent reflections184 reflections with I > 2σ(I)R
int = 0.1513 standard reflections every 150 reflections intensity decay: none
Refinement
R[F
2 > 2σ(F
2)] = 0.046wR(F
2) = 0.109S = 1.03284 reflections22 parameters1 restraintΔρmax = 0.55 e Å−3Δρmin = −0.37 e Å−3Data collection: Rigaku/AFC Diffractometer Control Software (Rigaku, 1998 ▶); cell refinement: Rigaku/AFC Diffractometer Control Software; data reduction: TEXSAN (Molecular Structure Corporation, 1998 ▶); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: ATOMS (Dowty, 1999 ▶); software used to prepare material for publication: SHELXL97 and WinGX (Farrugia, 1999 ▶).Crystal structure: contains datablock(s) global, I. DOI: 10.1107/S1600536812033132/ru2039sup1.cifStructure factors: contains datablock(s) I. DOI: 10.1107/S1600536812033132/ru2039Isup2.hklAdditional supplementary materials: crystallographic information; 3D view; checkCIF report
C1.99B12.88
Dx = 2.416 Mg m−3
Mr = 163.14
Mo Kα radiation, λ = 0.71073 Å
Trigonal, R3m
Cell parameters from 20 reflections
Hall symbol: -R 3 2"
θ = 8–50°
a = 5.6530 (8) Å
µ = 0.10 mm−1
c = 12.156 (4) Å
T = 293 K
V = 336.42 (17) Å3
Prism, black
Z = 3
0.45 × 0.3 × 0.21 mm
F(000) = 229
Rigaku AFC 7R diffractometer
θmax = 39.8°, θmin = 4.5°
ω–2θ scans
h = −10→8
1489 measured reflections
k = 0→10
284 independent reflections
l = −21→21
184 reflections with I > 2σ(I)
3 standard reflections every 150 reflections
Rint = 0.151
intensity decay: none
Refinement on F2
22 parameters
Least-squares matrix: full
1 restraint
R[F2 > 2σ(F2)] = 0.046
w = 1/[σ2(Fo2) + (0.0481P)2 + 0.3407P] where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.109
(Δ/σ)max = 0.002
S = 1.03
Δρmax = 0.55 e Å−3
284 reflections
Δρmin = −0.37 e Å−3
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes)
are estimated using the full covariance matrix. The cell e.s.d.'s are taken
into account individually in the estimation of e.s.d.'s in distances, angles
and torsion angles; correlations between e.s.d.'s in cell parameters are only
used when they are defined by crystal symmetry. An approximate (isotropic)
treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s.
planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor
wR and goodness of fit S are based on F2, conventional
R-factors R are based on F, with F set to zero for
negative F2. The threshold expression of F2 >
σ(F2) is used only for calculating R-factors(gt) etc.
and is not relevant to the choice of reflections for refinement.
R-factors based on F2 are statistically about twice as large
as those based on F, and R- factors based on ALL data will be
even larger.
Authors: Matlab N Mirzayev; Alexander A Donkov; Evgeni A Popov; Ertugrul Demir; Sakin H Jabarov; Levan S Chkhartishvili; Samuel A Adeojo; Aleksandr S Doroshkevich; Alexey A Sidorin; Asif G Asadov; Thabsile T Thabethe; Mayeen U Khandaker; Sultan Alamri; Hamid Osman; Alex V Trukhanov; Sergei V Trukhanov Journal: Nanomaterials (Basel) Date: 2022-07-31 Impact factor: 5.719