| Literature DB >> 22886822 |
Surajit Some1, Jangah Kim, Keunsik Lee, Atul Kulkarni, Yeoheung Yoon, Saemi Lee, Taesung Kim, Hyoyoung Lee.
Abstract
Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.Entities:
Mesh:
Substances:
Year: 2012 PMID: 22886822 DOI: 10.1002/adma.201202255
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849